Manufacturing method of semiconductor device
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor film over an insulating film;
forming a gate insulating film over the oxide semiconductor film;
forming a gate electrode layer over the gate insulating film;
adding oxygen to the oxide semiconductor film after forming the gate electrode layer.
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Accused Products
Abstract
A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
129 Citations
14 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film over an insulating film; forming a gate insulating film over the oxide semiconductor film; forming a gate electrode layer over the gate insulating film; adding oxygen to the oxide semiconductor film after forming the gate electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film over an insulating film; forming a gate insulating film over the oxide semiconductor film; forming a gate electrode layer over the gate insulating film; forming an insulating layer over the gate electrode layer; adding oxygen to the oxide semiconductor film after forming the insulating layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification