Spacer scheme for semiconductor device
First Claim
Patent Images
1. A semiconductor device comprising:
- a gate structure;
a first spacer positioned on sidewalls of the gate structure;
a second spacer positioned on the first spacer, the second spacer comprising a silicon nitride layer and a carbon-containing layer;
a SiCN-based protecting layer formed between the first spacer and the second spacer; and
epitaxial layers respectively positioned at two sides of the second spacer.
1 Assignment
0 Petitions
Accused Products
Abstract
A manufacturing method for a semiconductor device includes providing a substrate having at least agate structure formed thereon and a first spacer formed on sidewalls of the gate structure, performing an ion implantation to implant dopants into the substrate, forming a disposal spacer having at least a carbon-containing layer on the sidewalls of the gate structure, the carbon-containing layer contacting the first spacer, and performing a thermal treatment to form a protecting layer between the carbon-containing layer and the first spacer.
-
Citations
5 Claims
-
1. A semiconductor device comprising:
-
a gate structure; a first spacer positioned on sidewalls of the gate structure; a second spacer positioned on the first spacer, the second spacer comprising a silicon nitride layer and a carbon-containing layer; a SiCN-based protecting layer formed between the first spacer and the second spacer; and epitaxial layers respectively positioned at two sides of the second spacer. - View Dependent Claims (2, 3, 4, 5)
-
Specification