Methods of fabricating optoelectronic devices using layers detached from semiconductor donors and devices made thereby
First Claim
1. A method of fabricating an optoelectronic device, comprising:
- providing a semiconductor donor having a detachable layer;
liberating the detachable layer from the donor; and
incorporating the detachable layer into the optoelectronic device as an electrically functional element of the optoelectronic device;
wherein;
said providing the semiconductor donor includes providing an inherently lamellar material, said inherently lamellar material including at least one van der Waals cleavage plane; and
said liberating includes liberating at least one lamella from the semiconductor donor along said at least one van der Waals cleavage plane.
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Accused Products
Abstract
Methods of making optoelectronic devices containing functional elements made from layers liberated from natural and/or fabricated lamellar semiconductor donors. In one embodiment, a donor is provided, a layer is detached from the donor, and the layer is incorporated into an optoelectronic device as a functional element thereof. The thickness of the detached layer is tuned as needed to suit the functionality of the functional element. Examples of functional elements that can be made using detached layers include p-n junctions, Schotkey junctions, PIN junctions, and confinement layers, among others. Examples of optoelectronic devices that can incorporate detached layers include LEDs, laser diodes, MOSFET transistors, and MISFET transistors, among others.
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Citations
36 Claims
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1. A method of fabricating an optoelectronic device, comprising:
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providing a semiconductor donor having a detachable layer; liberating the detachable layer from the donor; and incorporating the detachable layer into the optoelectronic device as an electrically functional element of the optoelectronic device; wherein; said providing the semiconductor donor includes providing an inherently lamellar material, said inherently lamellar material including at least one van der Waals cleavage plane; and said liberating includes liberating at least one lamella from the semiconductor donor along said at least one van der Waals cleavage plane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A method of fabricating an optoelectronic device having an electrically functional element, the method comprising:
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providing a donor having a crystalline semiconductor layer, wherein the donor includes at least one van der Waals cleavage plane to allow the crystalline semiconductor layer to be liberated therefrom; liberating the crystalline semiconductor layer from the donor along the at least one van der Waals cleavage plane; incorporating the crystalline semiconductor layer into the optoelectronic device as the optoelectrically functional element; and providing the optoelectrically functional element with a predetermined thickness based on the optoelectrical function of the optoelectrically functional element. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36)
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Specification