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Engineered substrates for semiconductor devices and associated systems and methods

  • US 9,269,858 B2
  • Filed: 08/31/2011
  • Issued: 02/23/2016
  • Est. Priority Date: 08/31/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region; and

    an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials, wherein at least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light, and wherein at least one of the first material and the second material includes a lens shape.

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