Light emitting diodes with low refractive index material layers to reduce light guiding effects
First Claim
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1. A light-emitting diode (LED) comprising:
- at least one n-doped layer ;
at least one p-doped layer;
an active region comprising of at least one layer of light-emitting material, disposed between the at least one n-doped layer and the at least one p-doped layer;
at least one low refractive index layer disposed within one optical wavelength of the active region, wherein the optical wavelength indicates wavelength of light emitted from the active region, and the at least one low refractive index layer configured to substantially reduce light guiding by the active region; and
an InGaN superlattice underlying the active region, wherein the at least one low refractive index material layer is disposed within less than one optical wavelength of the InGaN superlattice,wherein the active region including the at least one low refractive index layer is characterized by an average refractive index from 0% to 5% higher than the refractive index of a host material.
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Abstract
Light emitting diodes including low refractive index layers for reducing guided light are disclosed. The light-emitting diodes include at least one n-doped layer, at least one p-doped layer, and an active region disposed between the at least one n-doped layer and the at least one p-doped layer. The active region comprises a light-emitting material. The light-emitting diode further comprises at least one low refractive index layer disposed in or around the active region.
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Citations
66 Claims
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1. A light-emitting diode (LED) comprising:
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at least one n-doped layer ; at least one p-doped layer; an active region comprising of at least one layer of light-emitting material, disposed between the at least one n-doped layer and the at least one p-doped layer; at least one low refractive index layer disposed within one optical wavelength of the active region, wherein the optical wavelength indicates wavelength of light emitted from the active region, and the at least one low refractive index layer configured to substantially reduce light guiding by the active region; and an InGaN superlattice underlying the active region, wherein the at least one low refractive index material layer is disposed within less than one optical wavelength of the InGaN superlattice, wherein the active region including the at least one low refractive index layer is characterized by an average refractive index from 0% to 5% higher than the refractive index of a host material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A light-emitting diode (LED) comprising:
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at least one n-doped layer comprising a gallium-nitride-based material having a host refractive index; at least one p-doped layer comprising a gallium-nitride-based material; an AlGaN/InGaN superlattice characterized by an average refractive index, wherein the average refractive index does not exceed that of the host refractive index by more than 0.05; an active region comprising a series of quantum wells, or one or more double heterostructures, wherein the series of quantum wells, or the one or more double heterostructures have a first indium composition, and further comprising a series of InGaN dummy quantum wells having a second indium composition lower than the first indium composition, wherein the dummy quantum wells do not emit a substantial amount of light and are positioned either above or below the active region, and wherein the active region is characterized by a total thickness of less than 50 nm; and an electron blocking layer having a low refractive index, wherein the low refractive index is lower than the host refractive index by at least 0.05. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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18. A light-emitting diode (LED) comprising:
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at least one n-doped layer comprising a gallium-nitride-based material; at least one p-doped layer comprising a gallium-nitride-based material; an active region disposed between the at least one n-doped layer and the at least one p-doped layer, the active region comprising one or more layers formed of an indium-gallium- nitride-based light emitting material; at least one low refractive index material layer disposed between the at least one p-doped layer and the active region, or between the at least one n-doped layer and the active region, wherein the at least one low refractive index material layer has an index of refraction lower than an index of refraction of gallium nitride; and an InGaN superlattice underlying the active region, wherein the at least one low refractive index material layer is disposed within less than one optical wavelength of the InGaN superlattice, wherein the optical wavelength indicates wavelength of light emitted from the active region. - View Dependent Claims (19, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51)
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20. A method of fabricating a light-emitting diode (LED) comprising:
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providing a substrate, the substrate including a surface region comprising a gallium- nitride-based material; forming at least one n-doped layer coupled to the surface region of the substrate, the at least one n-doped layer comprising a gallium-nitride-based material; forming an active region coupled to the n-doped layer, the active region comprising one or more layers formed of an indium-gallium-nitride-based material; forming at least one p-doped layer coupled to the active region, the at least one p-doped layer comprising a gallium-nitride-based material; forming at least one low refractive index material layer disposed between the at least one p-doped layer and the active region, or between the at least one n-doped layer and the active region, wherein the at least one low refractive index layer has an index of refraction lower than an index of refraction of gallium nitride and the low refractive index layer is formed to substantially reduce light guiding by the active region; and forming an InGaN superlattice underlying the active region, wherein the at least one low refractive index material layer is disposed within less than one optical wavelength of the InGaN superlattice, wherein the optical wavelength indicates wavelength of light emitted from the active region. - View Dependent Claims (52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66)
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Specification