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Liquid crystal display device and fabricating method thereof

  • US 9,274,390 B2
  • Filed: 07/25/2002
  • Issued: 03/01/2016
  • Est. Priority Date: 07/25/2001
  • Status: Active Grant
First Claim
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1. A liquid crystal display device, comprising:

  • first and second substrates facing into each other;

    a gate line and a data line on an inner surface of the first substrate, the gate line and the data line defining a pixel region;

    a thin film transistor connected to the gate line and the data line;

    a passivation layer of an organic material directly on the film transistor, wherein the passivation layer has a contact hole exposing the thin film transistor;

    a pixel electrode connected to the thin film transistor through the contact hole and disposed at the pixel region, wherein the pixel electrode is formed directly on the passivation layer;

    a color filter layer disposed closer than the pixel electrode from the first substrate, the color filter layer corresponding to the pixel electrode and the pixel region, wherein two adjacent color filter layers in two adjacent pixel regions are spaced apart from each other to define a gap with the first substrate;

    an overcoat layer on the color filter layer that protects and planarizes the color filter layer, wherein the gap is filled with the overcoat layer such that a step generated by the gap is eliminated, and wherein a top surface of the overcoat layer is flat without a through hole;

    a black matrix over the thin film transistor, wherein the black matrix includes a conductive metallic material, wherein the black matrix is formed directly on the passivation layer;

    a common electrode on an inner surface of the second substrate; and

    a liquid crystal layer interposed between the pixel electrode and the common electrode,wherein the pixel electrode covers the entire black matrix to sandwich the black matrix between the pixel electrode and the thin film transistor and is electrically connected to the entire black matrix and wherein the color filter layer is formed under the thin film transistor.

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