Methods and systems for determining a dose-to-clear of a photoresist

• US 9,275,449 B2
• Filed: 07/16/2013
• Issued: 03/01/2016
• Est. Priority Date: 07/16/2013
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Sun, Lei, Wood, Obert Reeves II
• Primary Examiner(s): Alam, Mohammed
• Application Number:
  US13/943,253
• Publication Number:
  US 20150023583A1
• Time in Patent Office: 959 Days
• Field of Search: 716/50
• US Class Current: 1/1
• CPC Class Codes: G06T 2207/10061 from scanning electron microscope
• CPC Class Codes: G06T 2207/20056 Discrete and fast Fourier transform, [DFT, FFT]
• CPC Class Codes: G06T 2207/30148 Semiconductor; IC; Wafer
• CPC Class Codes: G06T 7/0004 Industrial image inspection

Abstract

A method of determining a dose-to-clear of a photoresist on a wafer includes providing an image of the wafer after the photoresist was exposed to a dose of energy and was developed, transforming the image of the wafer into frequency spectrum data, calculating an average frequency spectrum component of the frequency spectrum data, calculating a difference between the average frequency spectrum component and a noise average frequency spectrum component of a noise average frequency spectrum, and determining a dose-to-clear of the photoresist based on the difference between the average frequency spectrum component and the noise average frequency spectrum component.

Claims

1. A computer-implemented method of determining a dose-to-clear of a photoresist on a wafer, wherein the dose-to-clear is the amount of energy to which the photoresist must be exposed in order to dissolve the entire exposed area of the photoresist when the photoresist is developed, the method comprising:

providing an image of the wafer after the photoresist was exposed to a dose of energy and was developed;

transforming, with a processor, the image of the wafer into frequency spectrum data;

calculating, with the processor, an average frequency spectrum component of the frequency spectrum data;

calculating, with the processor, a difference between the average frequency spectrum component and a noise average frequency spectrum component of a noise average frequency spectrum; and

determining a dose-to-clear the photoresist based on the difference between the average frequency spectrum component and the noise average frequency spectrum component.

2. The method of claim 1, wherein the image of the wafer is provided in the spatial domain.

3. The method of claim 1, wherein calculating an average frequency spectrum component includes averaging the frequency spectrum data excluding frequency spectrum components along center lines of the frequency spectrum data.

4. The method of claim 1, wherein calculating a difference further includes calculating a difference using a noise average frequency spectrum component that is calibrated to the scanning electron microscope (SEM) tool used to take SEM noise images that are the spatial domain of the noise average frequency spectrum.

5. The method of claim 1, wherein determining the dose-to-clear includes calculating a best fit curve of the calculated differences.

6. The method of claim 5, wherein determining the dose-to-clear includes determining the dose-to-clear as the dose at which the calculated difference at the best fit curve is less than a threshold.

7. The method of claim 6, wherein the threshold is from one to ten times the standard deviation of the noise average frequency spectrum component.

8. The method of claim 1, wherein transforming the image of the wafer into frequency spectrum data includes transforming the image of the wafer using a Fourier transform.

9. The method of claim 8, wherein using a Fourier transform includes using a discrete Fourier transform based on the pixels of the image of the wafer.

10. A computer-implemented method of determining projection optics flare in a lithographic system, the method comprising:

determining a dose-to-clear of a photoresist on a wafer, wherein the dose-to-clear is the amount of energy to which the photoresist must be exposed in order to dissolve the entire exposed area of the photoresist when the photoresist is developed, determining the dose-to-clear comprising;

providing an image of the wafer after the photoresist was exposed to a dose of energy and was developed;

transforming, with a processor, the image of the wafer into frequency spectrum data;

calculating, with the processor, an average frequency spectrum component of the frequency spectrum data;

calculating, with the processor, a difference between the average frequency spectrum component and a noise average frequency spectrum component of a noise average frequency spectrum; and

determining a dose-to-clear the photoresist based on the difference between the average frequency spectrum component and the noise average frequency spectrum component; and

determining the projection optics flare based on the dose-to-clear.

11. The method of claim 10, wherein calculating an average frequency spectrum component includes averaging the frequency spectrum data excluding frequency spectrum components along center lines of the frequency spectrum data.

12. The method of claim 10, wherein determining the dose-to-clear includes calculating a best fit curve of the calculated differences and determining the dose-to-clear as the dose at which the calculated difference at the best fit curve is less than a threshold.

13. A non-transitory computer readable medium storing control logic for operating a computer system, the control logic including control logic instructions for determining a dose-to-clear of a photoresist on a wafer, wherein the dose-to-clear is the amount of energy to which the photoresist must be exposed in order to dissolve the entire exposed area of the photoresist when the photoresist is developed, the instructions when executed by a processor perform the steps comprising:

providing an image of the wafer after the photoresist was exposed to a dose of energy and was developed;

transforming the image of the wafer into frequency spectrum data;

calculating an average frequency spectrum component of the frequency spectrum data;

calculating a difference between the average frequency spectrum component and a noise average frequency spectrum component of a noise average frequency spectrum; and

determining a dose-to-clear the photoresist based on the difference between the average frequency spectrum component and the noise average frequency spectrum component.

14. The non-transitory computer readable medium of claim 13, wherein the control logic is further configured for providing the image of the wafer in the spatial domain.

15. The non-transitory computer readable medium of claim 13, wherein the control logic is further configured for averaging the frequency spectrum data excluding frequency spectrum components along center lines of the frequency spectrum data.

16. The non-transitory computer readable medium of claim 13, wherein the control logic is further configured for calculating a difference using a noise average frequency spectrum component that is calibrated to the scanning electron microscope (SEM) tool used to take SEM noise images that are the spatial domain of the noise average frequency spectrum.

17. The non-transitory computer readable medium of claim 13, wherein the control logic is further configured for calculating a best fit curve of the calculated differences and determining the dose-to-clear as the dose at which the calculated difference at the best fit curve is less than a threshold.

18. The non-transitory computer readable medium of claim 13, wherein the threshold is from one to ten times the standard deviation of the noise average frequency spectrum component.

19. The non-transitory computer readable medium of claim 18, wherein the control logic is further configured for transforming the image of the wafer using a Fourier transform.

20. The non-transitory computer readable medium of claim 19, wherein the control logic is further configured for using a discrete Fourier transform based on the pixels of the image of the wafer.