Semiconductor device

• US 9,275,921 B2
• Filed: 08/07/2014
• Issued: 03/01/2016
• Est. Priority Date: 01/30/2014
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Miyakawa, Takeshi
• Primary Examiner(s): Parekh, Nitin
• Application Number:
  US14/454,159
• Publication Number:
  US 20150214139A1
• Time in Patent Office: 572 Days
• Field of Search: 257/666, 257/675, 257/669, 257/E23.051
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/37013 being non uniform along the connector
• CPC Class Codes: H01L 2224/371 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/37147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/37599 Material
• CPC Class Codes: H01L 2224/40245 the item being metallic
• CPC Class Codes: H01L 2224/4103 Connectors having different sizes
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/84345 Shape, e.g. interlocking features
• CPC Class Codes: H01L 2224/84801 Soldering or alloying
• CPC Class Codes: H01L 23/28 Encapsulations, e.g. encapsulating layers, coatings, e.g. for protectionH01L23/552 takes precedence; insulating layers for contacts or interconnections H01L23/5329
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/4334 Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 23/492 Bases or plates or solder therefor
• CPC Class Codes: H01L 23/49541 Geometry of the lead-frame
• CPC Class Codes: H01L 23/49548 Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49568 specifically adapted to facilitate heat dissipation
• CPC Class Codes: H01L 24/34 Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/41 : of a plurality of strap connectors
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

According to one embodiment, the connector has a first portion and a second portion. The first portion is provided on the second surface of the semiconductor chip and bonded to the second electrode. The first portion has a first bonding surface bonded to the second electrode of the semiconductor chip, and a heat dissipation surface opposite the first bonding surface and exposed from the resin. The second portion protrudes from the first portion toward the second lead frame side and thinner than the first portion. The second portion has a second bonding surface bonded to the second lead frame and a level difference portion provided near the second bonding surface at the first portion side.

Claims

1. A semiconductor device comprising:

a first lead frame;

a second lead frame provided to be separated from the first lead frame;

a semiconductor chip provided on the first lead frame, the semiconductor chip having a first surface and a second surface opposite the first surface, the first surface bonded to the first lead frame;

a resin sealing the semiconductor chip; and

a connector having;

a first portion provided on the second surface of the semiconductor chip and bonded to a second electrode, the first portion having a first bonding surface bonded to the second electrode of the semiconductor chip, and a third surface opposite the first bonding surface and exposed from the resin; and

a second portion protruding from the first portion toward the second lead frame side and thinner than the first portion, the second portion having a second bonding surface bonded to the second lead frame, a lower surface provided between the first bonding surface and the second bonding surface, and a level difference portion provided between the second bonding surface and the lower surface, the second bonding surface provided on the second lead frame, the lower surface provided on the first lead frame, the second bonding surface being coplanar with a part of the lower surface.

2. The semiconductor device according to claim 1, wherein a recess is provided between the lower surface and the second bonding surface, and the level difference portion is provided between the recess and the second bonding surface.

3. The semiconductor device according to claim 2, wherein the recess is a trench extending in a direction orthogonal to a protruding direction of the second portion.

4. The semiconductor device according to claim 1, wherein the second bonding surface of the connector and an upper surface of the second lead frame bonded to the second bonding surface have the same width in a protruding direction of the second portion.

5. The semiconductor device according to claim 1, wherein the second bonding surface of the connector and an upper surface of the second lead frame bonded to the second bonding surface have the same length in a direction orthogonal to a protruding direction of the second portion.

6. The semiconductor device according to claim 1, wherein the third surface of the first portion of the connector is in a shape of a circle.

7. The semiconductor device according to claim 6, wherein the first bonding surface of the first portion is in a shape of a polygon with an area larger than an area of the third surface.

8. The semiconductor device according to claim 1, wherein the connector contains copper.

9. The semiconductor device according to claim 1, wherein a ratio of an area of the third surface to an area of the second electrode is 100% or more.

10. A semiconductor device comprising:

a first lead frame;

a second lead frame provided to be separated from the first lead frame;

a semiconductor chip provided on the first lead frame, the semiconductor chip including a semiconductor layer, a first electrode, and a second electrode, the semiconductor layer having a first surface and a second surface opposite the first surface, the first electrode being provided on the first surface and bonded to the first lead frame, the second electrode being provided on the second surface;

a resin sealing the semiconductor chip; and

a connector having;

a first portion provided on the second surface of the semiconductor chip and bonded to the second electrode, the first portion having a first bonding surface bonded to the second electrode of the semiconductor chip, and a third surface opposite the first bonding surface and exposed from the resin; and

a second portion protruding from the first portion toward the second lead frame side and thinner than the first portion, the second portion having a second bonding surface bonded to the second lead frame,

a first recess or a first protrusion provided at the second bonding surface of the connector,

a second protrusion engaging with the first recess or a second recess engaging with the first protrusion provided at an upper surface of the second lead frame bonded to the second bonding surface.

11. The semiconductor device according to claim 10, wherein the third surface of the first portion of the connector is in a shape of a circle.

12. The semiconductor device according to claim 11, wherein the first bonding surface of the first portion is in a shape of a polygon with an area larger than an area of the third surface.

13. The semiconductor device according to claim 10, wherein the connector contains copper.

14. The semiconductor device according to claim 10, wherein a ratio of an area of the third surface to an area of the second electrode is 100% or more.

15. A semiconductor device comprising:

a first lead frame;

a second lead frame provided to be separated from the first lead frame;

a semiconductor chip provided on the first lead frame, the semiconductor chip including a semiconductor layer, a first electrode, and a second electrode, the semiconductor layer having a first surface and a second surface opposite the first surface, the first electrode being provided on the first surface and bonded to the first lead frame, the second electrode being provided on the second surface;

an insulating film provided on the second surface and having an opening exposing the second electrode;

a resin sealing the semiconductor chip; and

a connector having;

a first portion provided on the second surface of the semiconductor chip and bonded to the second electrode, the first portion having a first bonding surface bonded to the second electrode of the semiconductor chip, and a third surface opposite the first bonding surface and exposed from the resin; and

a second portion protruding from the first portion to the second lead frame side and thinner than the first portion, the second portion having a second bonding surface bonded to the second lead frame,

an edge of the first bonding surface of the first portion of the connector being located on an inside of an edge of the opening of the insulating film at a distance of not less than 50 μ

m and not more than 200 μ

m.

16. The semiconductor device according to claim 15, wherein a ratio of an area of the opening to an area of the second electrode is not less than 80% and less than 100%.

17. The semiconductor device according to claim 15, wherein the third surface of the first portion of the connector is in a shape of a circle.

18. The semiconductor device according to claim 17, wherein the first bonding surface of the first portion is in a shape of a polygon with an area larger than an area of the third surface.

19. The semiconductor device according to claim 15, wherein the connector contains copper.

20. The semiconductor device according to claim 15, wherein a ratio of an area of the third surface to an area of the second electrode is 100% or more.