Semiconductor device and method for fabricating the same

• US 9,275,993 B2
• Filed: 08/07/2013
• Issued: 03/01/2016
• Est. Priority Date: 09/07/2012
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Weon-Hong, Song, Moon-Kyun, Won, Seok-Jun
• Primary Examiner(s): Moore, Whitney T
• Application Number:
  US13/960,977
• Publication Number:
  US 20140070325A1
• Time in Patent Office: 937 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/28008 Making conductor-insulator-semiconductor electrodes
• CPC Class Codes: H01L 21/823807 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 21/823857 with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 27/092 complementary MIS field-effect transistors
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence

Abstract

A semiconductor device includes a first interface film on a first area of a substrate, the first interface film including a first growth interface film and a second growth interface film on a lower portion of the first growth interface film, a first dielectric film on the first interface film, and a first gate electrode on the first dielectric film.

Claims

1. A semiconductor device comprising:

a first interface film on a first area of a substrate, the first interface film including,

a first growth interface film, and

a second growth interface film on a lower portion of the first growth interface film;

a first dielectric film on the first interface film;

a first gate electrode on the first dielectric film; and

a second interface film on a second area of the substrate,

the first growth interface film having a first thickness and the second interface film having a second thickness greater than the first thickness, and

the second interface film being in the form of a single layer.

2. The semiconductor device of claim 1, wherein the first growth interface film and the second growth interface film include at least one of silicon oxide and silicon oxynitride.

3. The semiconductor device of claim 1, further comprising:

a second dielectric film on the second interface film; and

a second gate electrode on the second dielectric film.

4. The semiconductor device of claim 3, wherein the first interface film has a third thickness less than the second thickness of the second interface film.

5. The semiconductor device of claim 3, further comprising:

a SiGe layer on a lower portion of the second interface film in the substrate.

6. The semiconductor device of claim 3, wherein the first interface film and the second interface film include at least one of silicon oxide and silicon oxynitride.

7. The semiconductor device of claim 1, wherein a dielectric constant of the first dielectric film is greater than a dielectric constant of the first and second growth interface films.

8. The semiconductor device of claim 1, wherein an upper surface of the first interface film is at a same level as an upper surface of the second interface film.