Low crosstalk, front-side illuminated, back-side contact photodiode array

• US 9,276,022 B2
• Filed: 09/29/2011
• Issued: 03/01/2016
• Est. Priority Date: 06/05/2006
• Status: Active Grant

• Current Assignee: OSI Optoelectronics, Inc. (OSI Systems Incorporated)
• Original Assignee: OSI Optoelectronics, Inc. (OSI Systems Incorporated)
• Inventors: Bui, Peter Steven, Taneja, Narayan Dass
• Primary Examiner(s): Li, Meiya
• Application Number:
  US13/248,172
• Publication Number:
  US 20120104532A1
• Time in Patent Office: 1,615 Days
• Field of Search: 257/46, 257/107, 257/120, 257/126, 257/128, 257/446, 257/448, 257/452, 257/459, 257/E27.129, 257/E27.133, 438/142, 250/211, 250/220
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1446 in a repetitive configuration
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14689 MOS based technologies
• CPC Class Codes: H01L 31/02016 Circuit arrangements of general character for the devices
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The present application is directed to novel front side illuminated, back side contact photodiodes and arrays thereof. In one embodiment, the photodiode has a substrate with at least a first and a second side and a plurality of electrical contacts physically confined to the second side. The electrical contacts are in electrical communication with the first side through a doped region of a first type and a doped region of a second type, each of the regions substantially extending from the first side through to the second side. In another embodiment, the photodiode includes a wafer with at least a first and a second side; and a plurality of electrical contacts physically confined to the second side, where the electrical contacts are in electrical communication with the first side through a diffusion of a p+region through the wafer and a diffusion of an n+region through the wafer.

Claims

1. A photodiode, wherein said photodiode comprises:

a substrate having a front side and a back side;

an active area positioned on said front side;

a first deep diffusion region formed within said substrate, located on a left side of said substrate, and extending from said front side to said back side;

a second deep diffusion region formed within said substrate, located on a right side of said substrate, and extending from said front side to said back side; and

a depletion region around said active area, wherein the first deep diffusion region and the second deep diffusion region are separated by said depletion region and the active area within the photodiode and wherein the first deep diffusion region and the second deep diffusion region each comprises deep diffused regions of a first conductivity type.

2. The photodiode array of claim 1, further comprising a plurality of electrical contacts attached to said back side.

3. The photodiode array of claim 1, further comprising, within said substrate, a shallow diffused region of a second conductivity type directly under said active area, wherein said second conductivity type is different than the first conductivity type.

4. The photodiode array of claim 3, further comprising, within said substrate, a third deep diffused region of the second conductivity type extending from said shallow diffused region to said back side.

5. The photodiode array of claim 4, wherein the first conductivity type is n+and the second conductivity type is p+.

6. The photodiode array of claim 1, further comprising a plurality of electrical contacts attached to said back side, wherein at least one of the plurality of electrical contacts is in contact with each of said first deep diffusion region and said second deep diffusion region.

7. The photodiode array of claim 1, wherein the substrate comprises silicon.

8. The photodiode array of claim 1, wherein the front side of the substrate forms a front side of a wafer containing said substrate and the back side of the substrate forms a back side of the wafer containing said substrate respectively.

9. The photodiode array of claim 1, wherein the photodiode is a part of a front side illuminated backside contact photodetector array.

10. The photodiode array of claim 1, wherein said substrate has a thickness of approximately 150 μ

m.

11. The photodiode array of claim 1, wherein said active area has a width of approximately 1 mm.