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Fin deformation modulation

  • US 9,276,062 B2
  • Filed: 10/01/2014
  • Issued: 03/01/2016
  • Est. Priority Date: 02/18/2013
  • Status: Active Grant
First Claim
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1. An integrated circuit (IC) structure comprising:

  • a semiconductor substrate;

    a first semiconductor strip and a second semiconductor strip over the semiconductor substrate;

    a first Shallow Trench Isolation (STI) region between and contacting the first semiconductor strip and the second semiconductor strip, wherein the first STI region comprises a first dielectric region; and

    a second STI region over the semiconductor substrate, wherein the second STI region comprises;

    a second dielectric region; and

    a third dielectric region over a bottom portion of the second dielectric region, wherein the first dielectric region and the second dielectric region are formed of a same dielectric material, and wherein the first STI region is free from dielectric regions formed of a same material as the third dielectric region.

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