Nitride semiconductor light-emitting diode
First Claim
Patent Images
1. A nitride semiconductor light-emitting diode, comprising:
- an n-side electrode;
a p-side electrode;
a nitride semiconductor stacking structure formed of a plurality of nitride semiconductor layers each having a principal surface of a non-polar plane or a semi-polar plane;
an active layer which is included in the nitride semiconductor stacking structure and generates a polarized light;
a first side surface;
a second side surface;
a third side surface; and
a fourth side surface, whereinX-axis is parallel to a polarization direction of the polarized light;
Z-axis is parallel to a normal direction of the principal surface;
Y-axis is perpendicular to both of the X-axis and the Z-axis;
the nitride semiconductor light-emitting diode comprises a light extraction surface through which the polarized light is emitted toward the outside of the nitride semiconductor light-emitting diode;
the light extraction surface has a normal line parallel to the Z-axis;
the first side surface consists only of a plane including the Z-axis and the Y-axis;
the second side surface consists only of a plane including the Z-axis and the Y-axis;
the second side surface is disposed parallel to the first side surface (150a);
the third side surface is perpendicular to the first and second side surfaces and includes the X-axis;
the fourth side surface is perpendicular to the first and second side surfaces and includes the X-axis;
the third side surface includes an inclined surface;
the fourth side surface includes an inclined surface;
the third and fourth side surfaces are symmetric with respect to a plane which includes the Z-axis and the X-axis; and
the following mathematical formulae (I), (II), and (III) are satisfied;
15 degrees≦
θ
≦
70 degrees
(I)
0.1≦
(L3 cos θ
)/h1≦
0.5
(II)
L2<
L1
(III)whereθ
represents an angle formed between the inclined surface and the Z-axis in a cross-sectional view including the Z-axis and the Y-axis;
h1 represents a height of the nitride semiconductor light-emitting diode in the cross-section;
L1 represents a width of the nitride semiconductor light-emitting diode in the cross-section;
L2 represents a width of the light extraction surface in the cross-section; and
L3 represents a length of the inclined surface in the cross-section.
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Abstract
Provided is a nitride semiconductor light-emitting diode having a higher light extraction efficiency and a higher polarization degree. A nitride semiconductor light-emitting diode according to the present invention comprises an active layer generating a polarized light, a first side surface, a second side surface, a third side surface, and a fourth side surface. The first and second side surfaces consist only of a plane including the Z-axis and the Y-axis. The third and fourth side surfaces are perpendicular to the first and second side surfaces and include the X-axis. The third and fourth side surfaces include an inclined surface.
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Citations
8 Claims
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1. A nitride semiconductor light-emitting diode, comprising:
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an n-side electrode; a p-side electrode; a nitride semiconductor stacking structure formed of a plurality of nitride semiconductor layers each having a principal surface of a non-polar plane or a semi-polar plane; an active layer which is included in the nitride semiconductor stacking structure and generates a polarized light; a first side surface; a second side surface; a third side surface; and a fourth side surface, wherein X-axis is parallel to a polarization direction of the polarized light; Z-axis is parallel to a normal direction of the principal surface; Y-axis is perpendicular to both of the X-axis and the Z-axis; the nitride semiconductor light-emitting diode comprises a light extraction surface through which the polarized light is emitted toward the outside of the nitride semiconductor light-emitting diode; the light extraction surface has a normal line parallel to the Z-axis; the first side surface consists only of a plane including the Z-axis and the Y-axis; the second side surface consists only of a plane including the Z-axis and the Y-axis; the second side surface is disposed parallel to the first side surface (150a); the third side surface is perpendicular to the first and second side surfaces and includes the X-axis; the fourth side surface is perpendicular to the first and second side surfaces and includes the X-axis; the third side surface includes an inclined surface; the fourth side surface includes an inclined surface; the third and fourth side surfaces are symmetric with respect to a plane which includes the Z-axis and the X-axis; and the following mathematical formulae (I), (II), and (III) are satisfied;
15 degrees≦
θ
≦
70 degrees
(I)
0.1≦
(L3 cos θ
)/h1≦
0.5
(II)
L2<
L1
(III)where θ
represents an angle formed between the inclined surface and the Z-axis in a cross-sectional view including the Z-axis and the Y-axis;h1 represents a height of the nitride semiconductor light-emitting diode in the cross-section; L1 represents a width of the nitride semiconductor light-emitting diode in the cross-section; L2 represents a width of the light extraction surface in the cross-section; and L3 represents a length of the inclined surface in the cross-section. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification