Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures
First Claim
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1. A method to fabricate semiconductor nanostructures, comprising:
- providing a semiconductor in a photoelectrochemical cell;
illuminating a surface of the semiconductor with narrowband light having energy exceeding the bandgap energy of the semiconductor; and
photoelectrochemically etching the surface of the semiconductor until a nanostructure forms in the surface that has a quantum-size-dependent bandgap energy greater than the energy of the narrowband light.
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Abstract
Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.
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Citations
20 Claims
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1. A method to fabricate semiconductor nanostructures, comprising:
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providing a semiconductor in a photoelectrochemical cell; illuminating a surface of the semiconductor with narrowband light having energy exceeding the bandgap energy of the semiconductor; and photoelectrochemically etching the surface of the semiconductor until a nanostructure forms in the surface that has a quantum-size-dependent bandgap energy greater than the energy of the narrowband light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification