Method for manufacturing nitride semiconductor device

• US 9,281,187 B2
• Filed: 04/19/2013
• Issued: 03/08/2016
• Est. Priority Date: 05/16/2012
• Status: Active Grant

• Current Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Original Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Inventors: Sato, Ken, Goto, Hirokazu, Shikauchi, Hiroshi, Tsuchiya, Keitaro, Shinomiya, Masaru, Hagimoto, Kazunori
• Primary Examiner(s): Matthews, Colleen A
• Assistant Examiner(s): SNOW, COLLEEN ERIN
• Application Number:
  US14/397,589
• Publication Number:
  US 20150126018A1
• Time in Patent Office: 1,054 Days
• Field of Search: 438/478, 257/19, 257/103, 257/96
• US Class Current: 1/1
• CPC Class Codes: C23C 16/303 Nitrides
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02507 Alternating layers, e.g. superlattice
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 29/155 Comprising only semiconductor materials H01L29/154 takes precedence
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/7787 with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

The invention provides a method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method including: growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate, wherein the first nitride semiconductor layer and the second nitride semiconductor layer are stacked.

Claims

1. A method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method comprising:

growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and

growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate,

wherein;

the first nitride semiconductor layer and the second nitride semiconductor layer are stacked;

a ratio of the V group element raw material gas to the III group element raw material gas (V/III ratio) in the step of growing the first nitride semiconductor layer is higher than a V/III ratio in step of growing the second nitride semiconductor layer; and

the first nitride semiconductor layer is a GaN layer and the second nitride semiconductor layer is an AlN layer.

2. The method for manufacturing a nitride semiconductor device according to claim 1, wherein the first and second raw material gas flow rates are set in such a manner that the V/III ratio becomes suitable for each of the first and second nitride semiconductor layers.

3. The method for manufacturing a nitride semiconductor device according to claim 2, wherein the V group element raw material gas is an ammonia gas.

4. The method for manufacturing a nitride semiconductor device according to claim 3, wherein the second nitride semiconductor layer is grown in such a manner that a total gas flow rate supplied to the reaction furnace becomes substantially equal to a total gas flow rate at the time of growing the first nitride semiconductor layer.

5. The method for manufacturing a nitride semiconductor device according to claim 2, wherein the second nitride semiconductor layer is grown in such a manner that a total gas flow rate supplied to the reaction furnace becomes substantially equal to a total gas flow rate at the time of growing the first nitride semiconductor layer.

6. The method for manufacturing a nitride semiconductor device according to claim 1, wherein the V group element raw material gas is an ammonia gas.

7. The method for manufacturing a nitride semiconductor device according to claim 6, wherein the second nitride semiconductor layer is grown in such a manner that a total gas flow rate supplied to the reaction furnace becomes substantially equal to a total gas flow rate at the time of growing the first nitride semiconductor layer.

8. The method for manufacturing a nitride semiconductor device according to claim 1, wherein the second nitride semiconductor layer is grown in such a manner that a total gas flow rate supplied to the reaction furnace becomes substantially equal to a total gas flow rate at the time of growing the first nitride semiconductor layer.