Light emitting device and light emitting device package

• US 9,281,342 B2
• Filed: 10/01/2014
• Issued: 03/08/2016
• Est. Priority Date: 04/13/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Choi, Kwang Ki, Jeong, Hwan Hee, Lee, Sang Youl, Song, June O
• Primary Examiner(s): Mondt, Johannes P
• Application Number:
  US14/503,906
• Publication Number:
  US 20150014734A1
• Time in Patent Office: 524 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13062 Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch installed on the light emitting structure to control the light emitting structure.

Claims

1. A light emitting device, comprising:

a first electrode;

a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode;

a second electrode on the light emitting structure;

a control switch on and configured to control the light emitting structure, wherein the control switch includes a body including a first dopant, and source and drain regions including a second dopant on the body, and wherein the second electrode extends to one of the source and drain regions from a portion of the second semiconductor layer via a lateral side of the body.

2. The light emitting device of claim 1, further comprising an insulating layer between the second electrode and the body.

3. The light emitting device of claim 1, wherein the control switch further comprises a gate insulating layer on the body between the source and drain regions and a gate electrode on the gate insulating layer.

4. The light emitting device of claim 1, wherein the body of the control switch is disposed on a top surface of the second semiconductor layer.

5. The light emitting device of claim 1, wherein the body of the control switch is directly disposed on a top surface of the second semiconductor layer.

6. The light emitting device of claim 1, wherein the first electrode is disposed on a bottom surface of the first semiconductor layer.

7. The light emitting device of claim 1, wherein both of the body and the second electrode are directly disposed on a top surface of the second semiconductor layer.

8. The light emitting device of claim 1, wherein the control switch includes a semiconductor switch.

9. The light emitting device of claim 1, wherein the control switch is disposed at an outer peripheral region of the light emitting structure.

10. The light emitting device of claim 1, wherein the body includes silicon.

11. A light emitting device, comprising:

a first electrode;

a light emitting structure including a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer;

a second electrode on the second semiconductor layer;

a body on the second semiconductor layer;

source and drain regions on the body;

a gate insulating layer on the body between the source and drain regions; and

a gate electrode on the gate insulating layer, and

an insulating layer between the second electrode and the body, wherein the second electrode is electrically connected to one of the source region or the drain region, wherein the body, the source region, the drain region, the gate insulating layer and the gate electrode are configured to form a control switch of the light emitting device, and wherein the second electrode extends to one of the source and drain regions from a portion of the second semiconductor layer via a lateral side of the body.

12. The light emitting device of claim 11, wherein the body is directly disposed on a top surface of the second semiconductor layer.

13. The light emitting device of claim 11, further comprising at least one of a reflective layer or an ohmic contact layer between the first electrode and the light emitting structure.

14. The light emitting device of claim 11, further comprising

a protective member on an outer peripheral region of a top surface of the first electrode, and

wherein the protective member vertically overlaps with at least one portion of the body of the control switch.

15. A light emitting device, comprising:

a first electrode;

a light emitting structure including a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer;

a second electrode on the second semiconductor layer;

a body on the second semiconductor layer;

source and drain regions on the body;

a gate insulating layer on the body between the source and drain regions;

a gate electrode on the gate insulating layer, and

a protective member on an outer peripheral region of a top surface of the first electrode, wherein the second electrode extends to one of the source and drain regions from a portion of the second semiconductor layer via a lateral

side of the body, and wherein the body, the source region, the drain region, the gate insulating layer and the gate electrode are configured to form a control switch of the light emitting device.

16. The light emitting device of claim 15, further comprising an insulating layer between the second electrode and the body.

17. The light emitting device of claim 15, wherein the second electrode is electrically connected to one of the source region or the drain region.

18. The light emitting device of claim 15, wherein the body is directly disposed on a top surface of the second semiconductor layer.

19. The light emitting device of claim 15, wherein the protective member vertically overlaps at least a portion of the body of the control switch.