Transistor structure and manufacturing method thereof

• US 9,281,380 B2
• Filed: 08/06/2014
• Issued: 03/08/2016
• Est. Priority Date: 02/18/2014
• Status: Active Grant

• Current Assignee: Wistron Corporation
• Original Assignee: Wistron Corporation
• Inventors: Kao, Chi-Jen, Peng, Yu-Jung, Wang, Yi-Kai
• Primary Examiner(s): Pham, Long
• Application Number:
  US14/452,539
• Publication Number:
  US 20150235967A1
• Time in Patent Office: 580 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/80 Constructional details

Abstract

A transistor structure including a gate, an insulation layer, a patterned semiconductor layer, a source, a drain and a light absorption layer and a manufacturing method thereof are provided. The gate is disposed on a substrate. An area of the gate overlaps an area of the patterned semiconductor layer. The insulation layer is disposed between the gate and the patterned semiconductor layer. The source and the drain are separated from each other and in contact with the patterned semiconductor layer. The patterned semiconductor layer is disposed between the light absorption layer and the substrate. An area of the light absorption layer overlaps an area of the patterned semiconductor layer. An absorption spectrum of the light absorption layer overlaps an absorption spectrum of the patterned semiconductor layer.

Claims

1. A transistor structure comprising:

a gate disposed on a substrate;

an insulation layer;

a patterned semiconductor layer, an area of the gate overlapping an area of the patterned semiconductor layer, the insulation layer located between the gate and the patterned semiconductor layer;

a source and a drain separated from each other, and the source and the drain contacting the patterned semiconductor layer;

a light absorption layer, the patterned semiconductor layer located between the light absorption layer and the substrate, and an area of the light absorption layer overlapping the area of the patterned semiconductor layer, wherein an absorption spectrum of the light absorption layer overlaps an absorption spectrum of the patterned semiconductor layer; and

a protective layer, wherein the gate is located between the protective layer and the insulation layer, and the protective layer is located between the light absorption layer and the substrate.

2. The transistor structure as recited in claim 1, wherein the wavelength of the absorption spectrum of the light absorption layer is from 290nm to 900nm.

3. The transistor structure as recited in claim 1, wherein a sheet resistance value of the light absorption layer ranged from 10¹² ohm/unit area to 10¹⁵ ohm/unit area.

4. The transistor structure as recited in claim 1, wherein a material of the light absorption layer comprises black photoresist or light absorbable dark color material, and an additive in the black photoresist comprises any one of a dye, a carbon black and a titanium metal.

5. The transistor structure as recited in claim 1, wherein the patterned semiconductor layer is located between the gate and the substrate.

6. The transistor structure as recited in claim 1, wherein the protective layer covers the gate and the insulation layer.

7. The transistor structure as recited in claim 1, wherein the insulation layer has a first opening, the protective layer has a second opening, and the first opening is connected with the second opening to expose a portion of the drain.

8. The transistor structure as recited in claim 5, wherein the insulation layer has an opening, and the opening exposes a portion of the drain.

9. The transistor structure as recited in claim 1, wherein a material of the patterned semiconductor layer comprises organic semiconductor material or inorganic semiconductor material.

10. The transistor structure as recited in claim 1, wherein a material of the patterned semiconductor layer comprises oxide semiconductor material.

11. The transistor structure as recited in claim 1, wherein the substrate is a flexible substrate.

12. The transistor structure as recited in claim 1, wherein the source contacts the drain at a side of the patterned semiconductor layer that is close to the substrate.

13. The transistor structure as recited in claim 1, wherein the source contacts the drain at a side of the patterned semiconductor layer that is away from the substrate.

14. A of manufacturing method a transistor structure comprising:

forming a gate on a substrate;

forming an insulation layer and a patterned semiconductor layer, an area of the gate overlapping an area of the patterned semiconductor layer, the insulation layer located between the gate and the patterned semiconductor layer;

forming a source and a drain separated from each other, and the source and the drain in contact with the patterned semiconductor layer;

forming a light absorption layer so that the patterned semiconductor layer is located between the light absorption layer and the substrate, and an area of the light absorption layer overlapping the area of the patterned semiconductor layer, wherein an absorption spectrum of the light absorption layer overlaps an absorption spectrum of the patterned semiconductor layer; and

forming a protective layer, the gate being located between the protective layer and the insulation layer, wherein the protective layer is located between the light absorption layer and the substrate.

15. The manufacturing method of the transistor structure as recited in claim 14, wherein the light absorption layer is manufactured by either a dry processing or a wet processing.

16. The manufacturing method of the transistor structure as recited in claim 15, wherein the wet processing comprises performing a coating process on the substrate.

17. The manufacturing method of the transistor structure as recited in claim 15, wherein the wet processing comprises performing a coating process in a roll-to-roll device.

18. The manufacturing method of the transistor structure as recited in claim 15, wherein the dry processing comprises either a physical deposition or a chemical deposition.

19. The manufacturing method of the transistor structure as recited in claim 14, wherein the patterned semiconductor layer is manufactured by either a dry processing or a wet processing.

20. The manufacturing method of the transistor structure as recited in claim 19, wherein the dry processing is performed in a vacuum equipment.

21. A transistor structure comprising:

a gate disposed on a substrate;

an insulation layer;

a patterned semiconductor layer, an area of the gate overlapping an area of the patterned semiconductor layer, and the insulation layer located between the gate and the patterned semiconductor layer;

a source and a drain separated from each other, and the source and the drain contacting the patterned semiconductor layer;

a light absorption layer, the patterned semiconductor layer located between the light absorption layer and the substrate, and an area of the light absorption layer overlapping the area of the patterned semiconductor layer, wherein an absorption spectrum of the light absorption layer overlaps an absorption spectrum of the patterned semiconductor layer; and

a protective layer, the gate being located between the protective layer and the insulation layer, wherein the insulation layer has a first opening, the protective layer has a second opening, and the first opening is connected with the second opening to expose a portion of the drain.