Semiconducting graphene composition, and electrical device including the same

• US 9,281,385 B2
• Filed: 06/20/2011
• Issued: 03/08/2016
• Est. Priority Date: 06/18/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Shin, Hyeon-jin, Choi, Jae-young, Ahn, Joung-real, Jeon, Cheol-ho
• Primary Examiner(s): Fahmy, Wael
• Assistant Examiner(s): Salerno, Sarah
• Application Number:
  US13/164,532
• Publication Number:
  US 20110309336A1
• Time in Patent Office: 1,723 Days
• Field of Search: 257/29, 257/E29.255, 438/408, 977/734
• US Class Current: 1/1
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01L 21/28255 the insulator being formed after the semiconductor body, the semiconductor belonging to Group IV and not being elemental silicon, e.g. Ge, SiGe, SiGeC
• CPC Class Codes: H01L 29/1606 Graphene
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/7317 Bipolar thin film transistors
• CPC Class Codes: H01L 29/7613 Single electron transistors; Coulomb blockade devices H01L29/7888 takes precedence
• CPC Class Codes: H01L 29/778 with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface H01L29/803 takes precedence
• CPC Class Codes: H01L 29/78684 having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys H01L29/7869 takes precedence
• CPC Class Codes: Y10T 428/30 Self-sustaining carbon mass or layer with impregnant or other layer

Abstract

A graphene composition including a graphene monolayer and an alkali metal disposed on the graphene monolayer.

Claims

1. A graphene composition comprising:

a planar-shaped molecular structure consisting of a graphene monolayer; and

an alkali metal disposed on the graphene monolayer,

wherein the alkali metal is in the form of at least one selected from the group consisting of a continuous thin film, a nanorod, and a nanocluster.

2. The graphene composition of claim 1, wherein the alkali metal comprises at least one element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, and francium.

3. The graphene composition of claim 1, wherein the alkali metal is sodium.

4. The graphene composition of claim 1, wherein the alkali metal is disposed on at least one surface of the graphene monolayer.

5. The graphene composition of claim 1, wherein the alkali metal has a 2-dimensional thin film structure.

6. The graphene composition of claim 1, wherein the alkali metal is in the form of a continuous thin film having a thickness of about 2 to about 200 angstroms.

7. The graphene composition of claim 1, wherein the alkali metal occupies about 30 to about 99 percent of an entire surface of the graphene monolayer.

8. The graphene composition of claim 1, wherein the alkali metal occupies about 50 to about 90 percent of an entire surface of the graphene monolayer.

9. The graphene composition of claim 1, wherein the composition has a band gap of about 0.4 electron volt or more.

10. The graphene composition of claim 1, wherein the graphene composition has a band gap of about 0.45 electron volt to about 0.8 electron volt.

11. The graphene composition of claim 1, wherein the graphene composition has a band gap of about 0.6 electron volt to about 0.8 electron volt.

12. The graphene composition of claim 1, wherein the graphene monolayer has an area of 1 square centimeter or more.

13. The graphene composition of claim 1, wherein the graphene monolayer has 10 or fewer wrinkles per 1000 square micrometers area.

14. The graphene composition of claim 1, wherein a purity of the graphene monolayer is about 99 percent or more.

15. The graphene composition of claim 1, wherein a substrate is further disposed under the graphene monolayer.

16. The graphene composition of claim 15, wherein the substrate comprises at least one selected from the group consisting of a plastic, silicon, a glass, a GaN, a silica, nickel, cobalt, iron, platinum, palladium, gold, aluminum, chromium, copper, manganese, molybdenum, rhodium, iridium, tantalum substrate, titanium, tungsten, uranium;

vanadium, and zirconium.

17. An electrical device comprising the graphene composition of claim 1.

18. The electrical device of claim 17, wherein the electrical device is at least one selected from the group consisting of a sensor, a bipolar junction transistor, a field effect transistor, a heterojunction bipolar transistor, a single electron transistor, a light emitting diode, and an organic electroluminescent diode.