Semiconductor device
First Claim
1. A semiconductor device comprising:
- a gate electrode;
an insulating film over the gate electrode; and
an oxide semiconductor film over the insulating film,wherein the insulating film and the oxide semiconductor film comprise hydrogen, andwherein a peak of a concentration profile of the hydrogen is located in the insulating film.
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Abstract
Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.
135 Citations
12 Claims
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1. A semiconductor device comprising:
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a gate electrode; an insulating film over the gate electrode; and an oxide semiconductor film over the insulating film, wherein the insulating film and the oxide semiconductor film comprise hydrogen, and wherein a peak of a concentration profile of the hydrogen is located in the insulating film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a gate electrode; an insulating film over the gate electrode; and an oxide semiconductor film including a channel formation region over the insulating film, wherein the insulating film and the oxide semiconductor film comprise hydrogen, wherein a peak of a concentration profile of the hydrogen is located in the insulating film, wherein the insulating film includes a first region and a second region, wherein the first region and the channel formation region overlap each other, wherein the second region and the channel formation region do not overlap each other, and wherein a hydrogen concentration in the second region is higher than a hydrogen concentration in the first region. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification