Methods of fabricating light emitting diodes by masking and wet chemical etching
First Claim
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1. A method of fabricating a Light Emitting Diode (LED) having a Group III Nitride layer including a Group III Nitride face, the method comprising:
- masking the Group III Nitride face with a two-dimensional array of dots of a mask material that are spaced apart from one another; and
wet chemical etching the Group III Nitride face that is exposed by the two-dimensional array of dots of the mask material that are spaced apart from one another to produce Group III Nitride features having sides that extend along crystal planes of the Group III Nitride layer, wherein sides of two adjacent Group III Nitride features touch one another.
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Abstract
An LED includes a mesa having a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure. The mesa face includes Group III Nitride surface features having tops that are defined by mask features, having bottoms, and having sides that extend along crystal planes of the Group III Nitride. The mask features may include a two-dimensional array of dots that are spaced apart from one another. Related fabrication methods are also disclosed.
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Citations
20 Claims
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1. A method of fabricating a Light Emitting Diode (LED) having a Group III Nitride layer including a Group III Nitride face, the method comprising:
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masking the Group III Nitride face with a two-dimensional array of dots of a mask material that are spaced apart from one another; and wet chemical etching the Group III Nitride face that is exposed by the two-dimensional array of dots of the mask material that are spaced apart from one another to produce Group III Nitride features having sides that extend along crystal planes of the Group III Nitride layer, wherein sides of two adjacent Group III Nitride features touch one another. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of fabricating a Light Emitting Diode (LED) having a Group III Nitride layer including a Group III Nitride face, the method comprising:
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masking the Group III Nitride face with a two-dimensional array of dots of a mask material that are spaced apart from one another; and wet chemical etching the Group III Nitride face that is exposed by the two-dimensional array of dots of the mask material that are spaced apart from one another to produce Group III Nitride features having sides that extend along crystal planes of the Group III Nitride layer, and a plurality of non-truncated cones between at least two adjacent sides of the Group III Nitride features. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification