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Methods of fabricating light emitting diodes by masking and wet chemical etching

  • US 9,281,445 B2
  • Filed: 10/21/2014
  • Issued: 03/08/2016
  • Est. Priority Date: 04/23/2013
  • Status: Active Grant
First Claim
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1. A method of fabricating a Light Emitting Diode (LED) having a Group III Nitride layer including a Group III Nitride face, the method comprising:

  • masking the Group III Nitride face with a two-dimensional array of dots of a mask material that are spaced apart from one another; and

    wet chemical etching the Group III Nitride face that is exposed by the two-dimensional array of dots of the mask material that are spaced apart from one another to produce Group III Nitride features having sides that extend along crystal planes of the Group III Nitride layer, wherein sides of two adjacent Group III Nitride features touch one another.

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