Light emitting apparatus

• US 9,281,448 B2
• Filed: 07/30/2014
• Issued: 03/08/2016
• Est. Priority Date: 12/09/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Choi, Kwang Ki, Jeong, Hwan Hee, Lee, Sang Youl, Song, June O
• Primary Examiner(s): Ha, Nathan
• Application Number:
  US14/447,397
• Publication Number:
  US 20140339590A1
• Time in Patent Office: 587 Days
• Field of Search: 257 98- 99
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device including a contact layer, a blocking layer over the contact layer, a protection layer adjacent the blocking layer, a light emitter over the blocking layer, and an electrode layer coupled to the light emitter. The electrode layer overlaps the blocking layer and protection layer, and the blocking layer has an electrical conductivity that substantially blocks flow of current from the light emitter in a direction towards the contact layer. In addition, the protection layer may be conductive to allow current to flow to the light emitter or non-conductive to block current from flowing from the light emitter towards the contact layer.

Claims

1. A light emitting device comprising:

a conductive support substrate;

a metal layer including a recess and on the conductive support substrate;

a light emitting structure layer on the metal layer;

a protection layer provided at a periphery of the conductive support substrate, and a portion of the protection layer is provided between the metal layer and the light emitting structure layer; and

an electrode structure at least partially overlapping the protection layer and disposed on the light emitting structure layer,

wherein the electrode structure includes;

an outer electrode including a first part and a second part,

an inner electrode provided in a region between the first part and the second part of the outer electrode and extending to electrically connect the first part of the outer electrode with the second part of the outer electrode, and

a pad electrically connected to at least one of the first part or the second part of the outer electrode,

wherein the outer electrode includes an outer side surface and an inner side surface with a width between the outer side surface and the inner side surface,

wherein the outer side surface of the outer electrode is spaced apart from an outermost side of a top of the light emitting structure layer,

wherein a first spaced distance of the outer side surface of the outer electrode is within 50 μ

m from the outermost side of the top of the light emitting structure layer, and

wherein the portion of the protection layer is interdisposed between the metal layer and the light emitting structure layer.

2. The light emitting device of claim 1, wherein a second spaced distance of the inner side surface of the outer electrode is within 50 μ

m from the outermost side of the top of the light emitting structure layer.

3. The light emitting device of claim 1, wherein a width of the first part of the outer electrode is within a range of 15 μ

m to 25 μ

m.

4. The light emitting device of claim 3, wherein a width of the second part of the outer electrode is different than the width of the first part of the outer electrode.

5. The light emitting device of claim 4, wherein the width of the second part of the outer electrode is within a range of 25 μ

m to 35 μ

m.

6. The light emitting device of claim 1, wherein the width of the outer electrode is greater than a width of the inner electrode.

7. The light emitting device of claim 1, wherein the recess is disposed on a top surface of the metal layer, and the light emitting device further comprising a current blocking layer disposed in the recess of the metal layer.

8. The light emitting device of claim 7, wherein a top surface of the current blocking layer contacts a bottom surface of the light emitting structure layer.

9. The light emitting device of claim 7, wherein a thickness of the current blocking layer and a depth of the recess are substantially same.

10. The light emitting device of claim 1, wherein the metal layer has an uneven structure.

11. The light emitting device of claim 7, wherein the current blocking layer has a width that is about 0.9˜

1.3 times a width of the inner electrode.

12. The light emitting device of claim 1, wherein the metal layer includes an ohmic layer, the ohmic layer contacting a side portion of the protection layer.

13. The light emitting device of claim 1, wherein the metal layer includes an ohmic layer and a reflective layer, the reflective layer contacting a bottom portion of the protection layer and a bottom portion of the ohmic layer.

14. The light emitting device of claim 7, wherein a portion of the inner electrode at least partially overlaps the current blocking layer.

15. The light emitting device of claim 1, wherein a top surface of the metal layer contacts a bottom surface of the light emitting structure layer.

16. The light emitting device of claim 1, wherein a bottom surface of the protection layer contacts a top surface of the metal layer, and

wherein a side surface of the protection layer contacts a side surface of the metal layer.

17. The light emitting device of claim 1, wherein a portion of the inner electrode at least partially overlaps the recess of the metal layer.

18. The light emitting device of claim 1, wherein the light emitting structure layer includes an inclined side surface, and

wherein the inclined side surface of the light emitting structure layer at least partially overlaps the protection layer.

19. The light emitting device of claim 1, wherein a portion of a top surface of the protection layer is exposed from the inclined side surface of the light emitting structure layer.

20. The light emitting device of claim 1, wherein the pad is disposed on a top surface of the first part or the second part of the outer electrode, and

wherein a width of the pad is greater than a width of the first part or the second part of the outer electrode.

21. The light emitting device of claim 1, wherein the electrode structure comprises at least one roughness pattern on a top surface of the electrode structure.

22. A light emitting device comprising:

a conductive support substrate;

a metal layer including a recess and on the conductive support substrate, the metal layer having an uneven structure, wherein the recess is disposed on a top surface of the metal layer;

a current blocking layer disposed in the recess of the metal layer;

a light emitting structure layer on the metal layer and having an inclined side surface;

a protection layer provided on an outer periphery portion of the conductive support substrate, a portion of the protection layer between the metal layer and the light emitting structure layer; and

an electrode structure at least partially overlapping the protection layer and disposed on the light emitting structure layer,

wherein the electrode structure includes;

an outer electrode including a first part and a second part,

an inner electrode provided in a region between the first part and the second part of the outer electrode and extending to electrically connect the first part of the outer electrode with the second part of the outer electrode, and

a pad electrically connected to at least one of the first part or the second part of the outer electrode,

wherein the outer electrode includes an outer side surface and an inner side surface with a width between the outer side surface and the inner side surface,

wherein the outer side surface of the outer electrode is spaced apart from an outermost side of a top of the light emitting structure layer,

wherein a spaced distance of the inner side surface of the outer electrode is within 50 μ

m from the outermost side of the top of the light emitting structure layer, and

wherein the portion of the protection layer is interdisposed between the metal layer and the light emitting structure layer.

23. The light emitting device of claim 22, wherein a width of the first part of the outer electrode is within a range of 15 μ

m to 25 μ

m.

24. The light emitting device of claim 23, wherein a width of the second part of the outer electrode is different than the width of the first part of the outer electrode.

25. The light emitting device of claim 22, wherein the width of the outer electrode is greater than a width of the inner electrode.

26. The light emitting device of claim 22, wherein a portion of a top surface of the protection layer is exposed from the inclined side surface of the light emitting structure layer.

27. The light emitting device of claim 22, wherein a thickness of the current blocking layer and a depth of the recess are substantially same.

28. The light emitting device of claim 22, wherein the current blocking layer has a width that is about 0.9˜

1.3 times a width of the inner electrode.

29. The light emitting device of claim 22, wherein a bottom surface of the protection layer contacts a top surface of the metal layer, and

wherein a side surface of the protection layer contacts a side surface of the metal layer.

30. A light emitting device comprising:

a conductive support substrate;

a metal layer including a recess and on the conductive support substrate, the metal layer having an uneven structure, wherein the recess is disposed on a top surface of the metal layer;

a current blocking layer disposed in the recess of the metal layer;

a light emitting structure layer on the metal layer and having an inclined side surface;

a protection layer provided on an outer periphery portion of the conductive support substrate, a portion of the protection layer between the metal layer and the light emitting structure layer, the inclined side surface of the light emitting structure layer at least partially overlapping the protection layer; and

an electrode structure at least partially overlapping the protection layer and disposed on the light emitting structure layer,

wherein the electrode structure includes;

an outer electrode including a first part and a second part,

an inner electrode provided in a region between the first part and the second part of the outer electrode and extending to electrically connect the first part of the outer electrode with the second part of the outer electrode, and

a pad electrically connected to at least one of the first part or the second part of the outer electrode,

wherein a bottom surface of the protection layer contacts a top surface of the metal layer,

wherein a side surface of the protection layer contacts a side surface of the metal layer,

wherein the current blocking layer has a width that is about 0.9˜

1.3 times a width of the inner electrode,

wherein the outer electrode includes an outer side surface and an inner side surface with a width between the outer side surface and the inner side surface, and

wherein the outer side surface of the outer electrode is spaced apart from an outermost side of a top of the light emitting structure layer, and

wherein a spaced distance of the outer side surface of the outer electrode is within in a range of 15 μ

m to 35 μ

m from the outermost side of the top of the light emitting structure layer, and

wherein the portion of the protection layer is interdisposed between the metal layer and the light emitting structure layer.

31. The light emitting device of claim 30, wherein a width of the first part of the outer electrode is within a range of 15 μ

m to 25 μ

m.

32. The light emitting device of claim 31, wherein a width of the second part of the outer electrode is different than the width of the first part of the outer electrode.

33. The light emitting device of claim 30, wherein the width of the outer electrode is greater than a width of the inner electrode.