Module for ozone cure and post-cure moisture treatment

• US 9,285,168 B2
• Filed: 09/28/2011
• Issued: 03/15/2016
• Est. Priority Date: 10/05/2010
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Lubomirsky, Dmitry, Pinson, Jay D. II, Floyd, Kirby H., Khan, Adib, Venkataraman, Shankar
• Primary Examiner(s): Lund, Jeffrie R
• Application Number:
  US13/247,687
• Publication Number:
  US 20120079982A1
• Time in Patent Office: 1,630 Days
• Field of Search: 134/1.1, 134/1.2
• US Class Current: 1/1
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: F26B 25/004 in the shape of discrete sheets wicket conveyors F26B15/085
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/67178 vertical arrangement
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 21/67196 characterized by the construction of the transfer chamber
• CPC Class Codes: H01L 21/67201 characterized by the construction of the load-lock chamber
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process

Abstract

A substrate processing system that has a plurality of deposition chambers, and one or more robotic arms for moving a substrate between one or more of a deposition chamber, load lock holding area, and a curing and treatment module. The substrate curing and treatment module is attached to the load-lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The chambers may be vertically aligned, have one or more access doors, and may include a heating system to adjust the curing and/or heating chambers between two or more temperatures respectively.

Claims

1. A substrate processing system comprising:

a plurality of deposition chambers;

a load-lock chamber;

a first robotic arm operable to move a substrate between one of the deposition chambers and the load-lock chamber;

a pair of substrate curing and treatment modules disposed on opposite ends of the load-lock chamber, wherein each of the substrate curing and treatment module comprises;

a curing chamber for curing a dielectric layer in an atmosphere comprising ozone;

a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor, wherein the curing chamber is vertically positioned with respect to the treatment chamber;

a heating system operatively coupled to the curing chamber and the treatment chamber, wherein the heating system is operative to adjust a first temperature of the curing chamber to from about 150°

C. to about 200°

C., and to adjust a second temperature of the treatment chamber to from about 80°

C. to about 100°

C.; and

an access door on both the curing chamber and the treatment chamber, wherein each of the access doors are operable to be moved to an open position to receive a substrate, and operable to be moved to a closed sealed position while the substrate is being cured or treated; and

a second robotic arm operable to move the substrate between the load-lock chamber and the curing chamber of the substrate curing and treatment module.

2. The system of claim 1, wherein the second robotic arm is operable to remove the substrate from the curing chamber and deliver the substrate to the treatment chamber.

3. The system of claim 1, further comprising a plurality of substrate curing and treatment modules, wherein each of the substrate curing and treatment modules is attached to the load-lock chamber.

4. The system of claim 1, wherein each of the curing chamber and the treatment chamber comprises a substrate rack to receive a plurality of substrates at the same time.

5. A substrate processing system, comprising:

a factory interface;

a plurality of processing chambers;

a load-lock chamber disposed on a backside of the factory interface, wherein the load-lock chamber connects the factory interface and the plurality of processing chambers; and

a first substrate curing and treatment module coupled to a first end of the load-lock chamber, wherein the first substrate curing and treatment module comprises;

a curing chamber comprising;

a substrate rack for holding a plurality of substrates; and

an access door operable to be moved to an open position to receive a substrate, and operable to be moved to a closed sealed position during curing, wherein the load lock chamber includes an opening aligned with the access door of the curing chamber; and

a treatment chamber comprising;

a substrate rack for holding a plurality of substrates; and

an access door operable to be moved to an open position to receive a substrate, and operable to be moved to a closed sealed position during treatment, wherein the load lock chamber includes an opening aligned with the access door of the treatment chamber,

wherein the curing chamber and the treatment chamber are vertically stacked together.

6. The substrate processing system of claim 5, further comprising:

a second substrate curing and treatment module coupled to a second end of the load-lock chamber, wherein the second end is opposite to the first end.

7. The substrate processing system of claim 5, wherein the curing chamber and treatment chamber are separated by a common wall.

8. The substrate processing system of claim 5, wherein the first substrate curing and treatment module further comprises:

a heating system operatively coupled to the curing chamber and the treatment chamber, wherein the heating system is operative to adjust a first temperature of the curing chamber to from about 150°

C. to about 200°

C., and to adjust a second temperature of the treatment chamber to from about 80°

C. to about 100°

C.

9. The substrate processing system of claim 8, wherein the first substrate curing and treatment module further comprises:

a gas distribution system operable to control flow of gases from a gas source into the curing chamber and the treatment chamber.

10. The substrate processing system of claim 9, wherein the first substrate curing and treatment module further comprises:

a gas return fluidly connected to a vacuum pump.

11. The substrate processing system of claim 5, further comprising a robotic arm operable to move substrates between the load-lock chamber and the curing chamber of the first substrate curing and treatment module.

12. The substrate processing system of claim 11, wherein the robotic arm is disposed in the factory interface.

13. The substrate processing system of claim 12, further comprising a plurality of front-opening unified pods (FOUPs) disposed on a front side of the factory interface, wherein the robotic arm is operable to transfer substrates between the FOUPs and the first curing and treatment module.