Scanner based optical proximity correction system and method of use

• US 9,286,416 B2
• Filed: 12/20/2012
• Issued: 03/15/2016
• Est. Priority Date: 01/18/2007
• Status: Active Grant

• Current Assignee: Nikon Corporation, Nikon Precision Incorporated (Nikon Corporation)
• Original Assignee: Nikon Corporation, Nikon Precision Incorporated (Nikon Corporation)
• Inventors: Tyminski, Jacek, Popescu, Raluca, Matsuyama, Tomoyuki
• Primary Examiner(s): DO, THUAN V
• Application Number:
  US13/721,910
• Publication Number:
  US 20130191794A1
• Time in Patent Office: 1,181 Days
• Field of Search: 716/53
• US Class Current: 1/1
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/68 Preparation processes not covered by groups G03F1/20 - G03F1/50
• CPC Class Codes: G06F 30/00 Computer-aided design [CAD]
• CPC Class Codes: G06F 30/398 Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] optical proximity correction [OPC] design processes G03F1/36

Abstract

A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether δ₁<ε₁, wherein δ₁ represents model vs. exposure difference and ε₁ represents predetermined criteria. The technique further includes completing the model when δ₁<ε₁.

Claims

1. A modeling method, comprising:

inputting tool parameters into a model;

inputting basic model parameters into the model;

generating a simulated, corrected reticle design using the tool parameters and the basic model parameters;

comparing an image of test patterns for an integrated circuit against the simulated, corrected reticle design;

determining whether a difference between the simulated, corrected reticle design and exposure results of the image of the test patterns is less than a predetermined criteria;

completing the model when the difference between the simulated, corrected reticle design and the exposure results of the image of the test patterns is less than the predetermined criteria; and

outputting information about variation of image to the tool parameters in order to determine which tool parameters are to be used in the model.

2. The method of claim 1, wherein the outputting information about variation of image to the tool parameters comprises outputting optical proximity effect sensitivities.

3. The method of claim 1, wherein the tool parameters comprise at least one of:

illuminator details;

lens signature as defined in terms of Jones Matrix Map representing lens signature;

local and global flare data;

longitudinal chromatic aberrations;

Illuminator spectrum; and

transverse and longitudinal synchronization errors.

4. The method of claim 3, wherein the illuminator details comprise information about intensity and polarization content of each location in the illumination pupil.

5. The method of claim 1, wherein the tool parameters further include at least one of:

NA error;

Sigma error; and

thermal aberration.

6. The method of claim 1, wherein the basic model parameters include at least one of:

generic test reticle data;

illuminator data;

numerical aperture data;

feature biasing data; and

non-printable sub-resolution assist features (SRAF).

7. The method of claim 1, further comprising inputting the exposure results of the image of the test patterns.

8. The method of claim 1, wherein the model comprises an optical proximity correction model.

9. A system for setting a model, comprising:

a computer infrastructure operable to;

generate a simulated, corrected reticle design using inputted tool parameters and inputted basic model parameters;

compare an image of test patterns for an integrated circuit against the simulated, corrected reticle design;

determine whether a difference between the simulated, corrected reticle design and exposure results of the image of the test patterns is less than a predetermined criteria;

complete a model when the difference between the simulated, corrected reticle design and the exposure results of the image of the test patterns is less than the predetermined criteria; and

output information about variation of image to the tool parameters in order to determine which tool parameters are to be used in the model.

10. The system of claim 9, wherein the outputting information about variation of image to the tool parameters comprises outputting optical proximity effect sensitivities.

11. The system of claim 9, wherein the tool parameters comprise at least one of:

illuminator details;

lens signature as defined in terms of Jones Matrix Map representing lens signature;

local and global flare data;

longitudinal chromatic aberrations;

Illuminator spectrum; and

transverse and longitudinal synchronization errors.

12. The system of claim 11, wherein the illuminator details comprise information about intensity and polarization content of each location in the illumination pupil.

13. The system of claim 9, wherein the tool parameters further include at least one of:

NA error;

Sigma error; and

thermal aberration.

14. The system of claim 9, wherein the basic model parameters include at least one of:

generic test reticle data;

illuminator data;

numerical aperture data;

feature biasing data; and

non-printable sub-resolution assist features (SRAF).

15. The system of claim 9, wherein the computer infrastructure is further operable to input the exposure results of the image of the test patterns.

16. The system of claim 9, wherein the model comprises an optical proximity correction model.

17. A computer program product comprising a computer-readable storage medium having readable program code embodied in the computer-readable storage medium, the computer program product includes at least one component to:

generate a simulated, corrected reticle design using inputted tool parameters and inputted basic model parameters;

compare an image of test patterns for an integrated circuit against the simulated, corrected reticle design;

determine whether a difference between the simulated, corrected reticle design and exposure results of the image of the test patterns is less than a predetermined criteria;

complete a model when the difference between the simulated, corrected reticle design and the exposure results of the image of the test patterns is less than the predetermined criteria; and

output information about validation of image to the tool parameters in order to determine which tool parameters are to be used in the model.

18. The program of claim 17, wherein the outputting information about variation of image to the tool parameters comprises outputting optical proximity effect sensitivities.

19. The program of claim 17, wherein the tool parameters comprise at least one of:

illuminator details;

lens signature as defined in terms of Jones Matrix Map representing lens signature;

local and global flare data;

longitudinal chromatic aberrations;

Illuminator spectrum; and

transverse and longitudinal synchronization errors.

20. The program of claim 19, wherein the illuminator details comprise information about intensity and polarization content of each location in the illumination pupil.

21. The system of claim 17, wherein the tool parameters further include at least one of:

NA error;

Sigma error; and

thermal aberration.

22. The system of claim 17, wherein the basic model parameters include at least one of generic test reticle data;

illuminator data;

numerical aperture data;

feature biasing data; and

non-printable sub-resolution assist features (SRAF).

23. The program of claim 17, wherein the model comprises an optical proximity correction model.