System, method and apparatus for controlling ion energy distribution

• US 9,287,086 B2
• Filed: 08/29/2010
• Issued: 03/15/2016
• Est. Priority Date: 04/26/2010
• Status: Active Grant

• Current Assignee: AES Global Holdings Pte Ltd. (Advanced Energy Industries, Inc. (China))
• Original Assignee: Advanced Energy Industries Incorporated
• Inventors: Brouk, Victor, Heckman, Randy, Hoffman, Daniel J.
• Primary Examiner(s): BRAYTON, JOHN JOSEPH
• Application Number:
  US12/870,837
• Publication Number:
  US 20110259851A1
• Time in Patent Office: 2,025 Days
• Field of Search: 20429801-29841, 118/723.R, 118/723.E, 118/723.I
• US Class Current: 1/1
• CPC Class Codes: C23C 14/345 using substrate bias
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: H01J 37/24 Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/3299 Feedback systems

Abstract

Systems, methods and apparatus for regulating ion energies in a plasma chamber are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.

Claims

1. A system for plasma-based processing, comprising:

a plasma processing chamber configured to contain a plasma that includes ions;

a substrate support positioned within the plasma processing chamber and disposed to support a substrate,

an ion-energy control portion, the ion-energy control portion including a DC power supply that provides a positive DC voltage that is fixed at a magnitude defined by an ion energy distribution setting, wherein the ion-energy distribution setting is indicative of a desired energy distribution of the ions at the surface of the substrate;

two switching components configured to alternately couple a ground potential and the positive DC voltage from the DC power supply to the substrate; and

an ion current compensation component coupled to the substrate support, the ion current compensation component effecting a controllable width of the ion energy distribution, the ion current compensation component including;

a controllable DC current source consistently coupled to the substrate support to provide uninterrupted compensation current with a fixed magnitude to the substrate support; and

a current controller that monitors a rate of change of a voltage of the DC power that is applied to the substrate support to obtain a measure of current of the ions, and the current controller fixes, based upon the ion current, the magnitude of the compensation current output from the current source to effectuate a monoenergetic distribution of ion energy at the surface of the substrate.

2. The system of claim 1 wherein the ion current compensation component is configured to enable a user to define a spread of a uniform distribution of ion energy.

3. The system of claim 1, wherein the substrate support includes an electrostatic chuck, the system including an electrostatic chuck supply coupled to the electrostatic chuck.

4. The system of claim 1, including an additional power supply coupled to the substrate support, the additional power supply is adapted to apply power to the substrate support so as to sustain the plasma in the plasma processing chamber.

5. The system of claim 1, wherein the two switching components are configured to apply a periodic voltage function to the substrate support responsive to the one or more drive signals;

wherein the ion-energy control portion is configured to modulate, over multiple cycles of the periodic voltage function, at least one parameter of the periodic voltage function responsive to the at least one ion-energy distribution setting so as to generate the desired distribution of energies of ions at the surface of the substrate on a time-averaged basis.

6. The system of claim 5, wherein the at least one parameter includes a voltage amplitude of the DC power supply.

7. An apparatus for plasma-based processing, comprising:

a DC power supply that provides a positive DC voltage that is fixed at a magnitude responsive to an ion-energy setting, wherein the ion-energy setting is indicative of a desired monoenergetic distribution of ion energy at the surface of a substrate;

an output disposed to couple to a substrate support;

two switching components including a first switching component coupled to the positive DC power supply and a second switching component coupled to a ground terminal, the two switching components configured to alternately couple the positive DC voltage and the ground terminal to the output to effectuate the desired monoenergetic distribution of ion energy at the surface of a substrate when the output is coupled to the substrate support; and

an ion current compensation component coupled to the output, the ion current compensation component including;

a controllable DC current source, separate from the DC power supply, that is consistently coupled to the output; and

a current controller configured to monitor a rate of change of a voltage of the output and maintain an uninterrupted DC current, which is fixed in magnitude, to the output based upon the rate of change of the voltage, wherein the DC power supply and the DC current source are sole sources of power coupled to the output.