Method of making a conductive pillar bump with non-metal sidewall protection structure

• US 9,287,171 B2
• Filed: 07/28/2014
• Issued: 03/15/2016
• Est. Priority Date: 04/29/2010
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wu, Yi-Wen, Lin, Cheng-Chung, Hwang, Chien Ling, Liu, Chung-Shi
• Primary Examiner(s): Parekh, Nitin
• Application Number:
  US14/444,759
• Publication Number:
  US 20140335687A1
• Time in Patent Office: 596 Days
• Field of Search: 438/612, 438/613, 438/666, 257/E21.509
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05023 the whole internal layer protruding from the surface
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05187 Ceramics, e.g. crystalline carbides, nitrides or oxides glass ceramics H01L2224/05188
• CPC Class Codes: H01L 2224/05541 Structure
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05582 Two-layer coating
• CPC Class Codes: H01L 2224/05611 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05671 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05681 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05687 Ceramics, e.g. crystalline carbides, nitrides or oxides glass ceramics H01L2224/05688
• CPC Class Codes: H01L 2224/10145 Flow barriers
• CPC Class Codes: H01L 2224/11 : Manufacturing methods
• CPC Class Codes: H01L 2224/11002 : for supporting the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/1112 : Applying permanent coating
• CPC Class Codes: H01L 2224/1132 : Screen printing, i.e. using a stencil
• CPC Class Codes: H01L 2224/1145 : Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/11452 : Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/11462 : Electroplating
• CPC Class Codes: H01L 2224/11464 : Electroless plating
• CPC Class Codes: H01L 2224/1147 : using a lift-off mask
• CPC Class Codes: H01L 2224/11827 : Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/11831 : involving a chemical process, e.g. etching the bump connector
• CPC Class Codes: H01L 2224/11849 : Reflowing
• CPC Class Codes: H01L 2224/11912 : the bump being used as a mask for patterning other parts
• CPC Class Codes: H01L 2224/13005 : Structure
• CPC Class Codes: H01L 2224/13007 : Bump connector smaller than the underlying bonding area, e.g. than the under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/13023 : the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/13083 : Three-layer arrangements
• CPC Class Codes: H01L 2224/13109 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13113 : Bismuth [Bi] as principal constituent
• CPC Class Codes: H01L 2224/13116 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/13118 : Zinc [Zn] as principal constituent
• CPC Class Codes: H01L 2224/1312 : Antimony [Sb] as principal constituent
• CPC Class Codes: H01L 2224/13123 : Magnesium [Mg] as principal constituent
• CPC Class Codes: H01L 2224/13124 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/13139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13164 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13166 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/13169 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/1317 : Zirconium [Zr] as principal constituent
• CPC Class Codes: H01L 2224/13171 : Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/13181 : Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/13551 : being non uniform
• CPC Class Codes: H01L 2224/13561 : On the entire surface of the core, i.e. integral coating
• CPC Class Codes: H01L 2224/13565 : Only outside the bonding interface of the bump connector
• CPC Class Codes: H01L 2224/1357 : Single coating layer
• CPC Class Codes: H01L 2224/1358 : being stacked
• CPC Class Codes: H01L 2224/13582 : Two-layer coating
• CPC Class Codes: H01L 2224/13644 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13647 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13655 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13664 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13686 : with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/13687 : Ceramics, e.g. crystalline carbides, nitrides or oxides glass ceramics H01L2224/13688
• CPC Class Codes: H01L 2224/13688 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2224/1369 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/81192 : wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/814 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 23/49811 : Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/05442 : SiO2
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/07025 : Polyimide
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/3841 : Solder bridging

Abstract

A method of making a semiconductor device includes forming an under bump metallurgy (UBM) layer over a substrate, the UBM layer comprising sidewalls and a surface region. The method further includes forming a conductive pillar over the UBM layer, the conductive pillar includes sidewalls, wherein the conductive pillar exposes the surface region of the UBM layer. The method further includes forming a non-metal protective structure over the sidewalls of the conductive pillar, wherein the non-metal protective structure contacts the surface region of the UBM layer, and the non-metal protective structure exposes the sidewalls of the UBM layer.

Claims

1. A method of making a semiconductor device, the method comprising:

forming an under bump metallurgy (UBM) layer over a substrate, the UBM layer comprising sidewalls and a surface region;

forming a conductive pillar over the UBM layer, the conductive pillar comprising sidewalls, wherein the conductive pillar exposes the surface region of the UBM layer;

forming a barrier layer over the conductive pillar; and

forming a non-metal protective structure over the sidewalls of the conductive pillar, wherein the non-metal protective structure contacts the surface region of the UBM layer, the barrier layer is between the non-metal protective structure and the conductive pillar, and the non-metal protective structure exposes the sidewalls of the UBM layer.

2. The method of claim 1, further comprising forming a plurality of cap layers over a top surface of the conductive pillar.

3. The method of claim 2, further comprising forming a solder layer formed on the plurality of cap layers, wherein the protection structure covers at least a portion of a sidewall surface of the plurality of cap layers and a sidewall surface of the solder layer.

4. The method of claim 2, wherein forming the plurality of cap layers comprises forming a first metal film and forming a second metal film, and the first metal film and the second metal film independently comprise Ni, Au, Pd, or alloys thereof.

5. The method of claim 1, wherein forming the barrier layer comprises forming the barrier layer between the UBM layer and the protection structure.

6. The method of claim 5, wherein forming the barrier layer comprises covering the surface region of the UBM layer.

7. A method of making a semiconductor device, the method comprising:

forming an under bump metallurgy (UBM) layer over a substrate, the UBM layer comprising a surface region;

forming a conductive pillar over the UBM layer, the conductive pillar comprising sidewalls and a top surface, wherein the surface region of the UBM layer is adjacent to the conductive pillar and extends perpendicular to the sidewalls of the conductive pillar; and

forming a protection structure on the sidewalls of the conductive pillar and in direct contact with the surface region, wherein the protective structure comprises a protection layer and a barrier layer, and the barrier layer is between the surface region and the protection layer.

8. The method of claim 7, further comprising forming a plurality of cap layers over the conductive pillar, wherein forming the plurality of cap layer comprises forming a first metal film and forming a second metal film, and the first metal film and the second metal film independently comprise Ni, Au, Pd, or alloys thereof.

9. The method of claim 7, wherein forming the UBM layer comprises forming a diffusion barrier layer comprising at least one of Ti, Ta, TiN or TaN.

10. The method of claim 7, wherein forming the UBM layer comprises forming a copper layer.

11. The method of claim 7, further comprising forming a barrier layer between the UBM layer and the protection structure and between the conductive pillar and the protection structure, wherein the barrier layer covers the surface region of the UBM layer.

12. A method of making an integrated circuit device, the method comprising:

forming at least one under bump metallurgy (UBM) layer over a substrate;

forming a conductive pillar over the at least one UBM layer, the conductive pillar including a top surface and a sidewall surface;

plating a solder layer on the top surface of the conductive pillar;

depositing a protection structure over the top surface and the sidewall surface, wherein depositing the protection structure comprises depositing the protection structure over the solder layer;

etching the protection structure to remove the protection structure over the top surface and remove a portion of the protection structure over the sidewall surface, the etched protection structure covering a surface region of the at least one UBM layer; and

etching the at least one UBM layer to remove portions of the at least one UBM layer extending beyond the surface region.

13. The method of claim 12, further comprising forming a barrier layer on the conductive pillar prior to depositing the protection structure, wherein forming the barrier layer comprises deoxidizing the conductive pillar and depositing the barrier layer using chemical vapor deposition (CVD).

14. The method of claim 12, wherein forming the at least one UBM layer comprises depositing a metal containing layer using physical vapor deposition (PVD) or sputtering.

15. The method of claim 12, wherein depositing the protecting structure comprises blanket depositing a dielectric material by low-pressure CVD (LPCVD), atmospheric-pressure CVD (APCVD) or plasma-enhanced CVD (PECVD).

16. The method of claim 12, wherein etching the protection structure comprises reactive ion etching.

17. The method of claim 12, wherein etching the at least one UBM layer comprises reactive ion etching or isotropic wet etching.

18. The method of claim 12, further comprising forming a cap layer on the top surface, wherein forming the cap layer comprises plating at least one metal containing layer on the top surface.

19. The method of claim 12, further comprising reflowing the solder layer after etching the protection structure.

20. The method of claim 12, wherein etching the protection structure comprises exposing a portion of sidewalls of the solder layer.