Interposer-on-glass package method

• US 9,287,172 B2
• Filed: 03/04/2013
• Issued: 03/15/2016
• Est. Priority Date: 06/10/2010
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Yu, Chen-Hua, Lin, Jing-Cheng
• Primary Examiner(s): Arbes, Carl
• Application Number:
  US13/784,379
• Publication Number:
  US 20130174417A1
• Time in Patent Office: 1,107 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2225/06517 Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06548 Conductive via connections through the substrate, container, or encapsulation
• CPC Class Codes: H01L 2225/06572 Auxiliary carrier between devices, the carrier having an electrical connection structure
• CPC Class Codes: H01L 23/13 characterised by the shape
• CPC Class Codes: H01L 23/147 Semiconductor insulating substrates semiconductor conductive substrates H01L23/4926
• CPC Class Codes: H01L 23/15 Ceramic or glass substrates H01L23/142, H01L23/145, H01L23/147 take precedence
• CPC Class Codes: H01L 23/49816 Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/5384 Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors H01L23/5383, H01L23/5385 take precedence; pins attached to insulating substrates H01L23/49811
• CPC Class Codes: H01L 23/5385 Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 25/03 all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15321 being a ball array, e.g. BGA
• CPC Class Codes: Y10T 29/49124 : On flat or curved insulated base, e.g., printed circuit, etc.
• CPC Class Codes: Y10T 29/49165 : by forming conductive walled aperture in base

Abstract

A method comprises providing an interposer comprising a substrate and a first through-substrate via (TSV) penetrating through the substrate, forming a first oxide layer on a surface of the interposer, bonding a glass substrate to the interposer through a fusion bonding, with the first oxide layer being between the interposer and the glass substrate and forming a second TSV in the glass substrate and electrically coupled to the first TSV.

Claims

1. A method comprising:

providing an interposer comprising;

a substrate; and

a first through-substrate via (TSV) penetrating through the substrate;

forming a first oxide layer on a surface of the interposer;

bonding a glass substrate to the interposer through a fusion bonding, with the first oxide layer being between the interposer and the glass substrate; and

forming a second TSV in the glass substrate and electrically coupled to the first TSV.

2. The method of claim 1, further comprising forming a second oxide layer on the glass substrate before the step of bonding, wherein the second oxide layer is bonded to and contacts the first oxide layer after the step of bonding.

3. The method of claim 1, wherein the glass substrate comprises a glass layer comprising an oxide, and wherein the glass layer is directly bonded to the first oxide layer.

4. The method of claim 1, wherein the glass substrate comprises a photo-sensitive glass layer and a non-photo-sensitive glass layer, and wherein the step of forming the second TSV comprises:

exposing the photo-sensitive glass layer using a lithography mask, with first portions of the photo-sensitive glass layer being exposed to light, and second portions of the photo-sensitive glass layer not exposed to the light;

etching the first portions of the photo-sensitive glass layer without etching the second portions of the photo-sensitive glass layer;

using the photo-sensitive glass layer as a hard mask to etch the non-photo-sensitive glass layer; and

filling an opening in the photo-sensitive glass layer and the non-photo-sensitive glass layer with a metallic material to form the second TSV.

5. The method of claim 1, further comprising:

before the step of bonding the glass substrate to the interposer, forming an opening extending from a surface of the glass substrate to at least an intermediate level of the glass substrate; and

bonding a die to the interposer, wherein after the step of bonding the glass substrate to the interposer, the die is located in the opening.

6. The method of claim 5, wherein the opening stops at the intermediate level of the glass substrate.

7. A method comprising:

depositing a first etch stop layer on a first side of an interposer, wherein the interposer comprises a substrate and a first through-substrate via (TSV) penetrating through the substrate;

depositing a second etch stop layer on the first etch stop layer;

depositing a first oxide layer on the second etch stop layer;

bonding a glass substrate to the interposer through a fusion bonding, wherein the first oxide layer is between the interposer and the glass substrate; and

forming a second TSV in the glass substrate and electrically coupled to the first TSV.

8. The method of claim 7, further comprising:

prior to the step of bonding the glass substrate to the interposer through the fusion bonding, depositing a second oxide layer on a bonding side of the glass substrate.

9. The method of claim 7, further comprising:

prior to the step of bonding the glass substrate to the interposer through the fusion bonding, oxidizing a top surface of a bonding side of the glass substrate.

10. The method of claim 7, wherein:

the first etch stop layer is formed of silicon nitride; and

the second etch stop layer is formed of silicon nitride.

11. The method of claim 7, wherein:

a width of the second TSV is greater than a width of the first TSV.

12. The method of claim 7, further comprising:

forming first bumps on a non-bonding side of the glass substrate;

bonding the glass substrate and the interposer on a printed circuit board through the first bumps; and

bonding a plurality of semiconductor dies on a second side of the interposer.

13. The method of claim 7, wherein:

the glass substrate comprises a photo-sensitive glass layer and a non-photo-sensitive glass layer, wherein the non-photo-sensitive glass layer is between the photo-sensitive glass layer and the interposer.

14. A method comprising:

depositing a first etch stop layer on a first side of an interposer, wherein the interposer comprises a substrate and a first through-substrate via (TSV);

depositing a first oxide layer over the first etch stop layer;

bonding a glass substrate to the interposer through a fusion bonding, wherein the first oxide layer is between the interposer and the glass substrate;

forming a second TSV in the glass substrate and electrically coupled to the first TSV; and

mounting a plurality of bumps on a non-bonding side of the glass substrate.

15. The method of claim 14, further comprising:

forming a redistribution layer between the interposer and the glass substrate.

16. The method of claim 15, wherein:

the bumps are connected to the interposer through the second TSV and the redistribution layer.

17. The method of claim 14, further comprising:

depositing a photo-resist layer on the non-bonding side of the glass substrate;

patterning the photo-resist layer; and

forming an opening through an etching process.

18. The method of claim 17, further comprising:

filling the opening with a metallic material to form the second TSV.

19. The method of claim 18, wherein:

the metallic material is copper.

20. The method of claim 14, further comprising:

depositing a second etch stop layer on the first etch stop layer, wherein the first etch stop layer and the second etch stop layer are formed of silicon nitride.