Passivated and faceted for fin field effect transistor
First Claim
Patent Images
1. A method of forming a fin field effect transistor (FinFET), the method comprising:
- forming one or more fins extending from a substrate, each of the one or more fins having one or more semiconductor layers overlying the substrate, each of the one or more fins having a lattice constant different than a lattice constant of an underlying layer;
forming a first passivation layer over the one or more fins;
after forming the first passivation layer, forming isolation regions along opposing sidewalls of the one or more fins, the one or more fins extending above an uppermost surface of the isolation regions;
reshaping exposed portions of the one or more fins; and
forming a second passivation layer over the reshaped exposed portions of the one or more fins.
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Abstract
A fin field effect transistor (FinFET), and a method of forming, is provided. The FinFET has a fin having one or more semiconductor layers epitaxially grown on a substrate. A first passivation layer is formed over the fins, and isolation regions are formed between the fins. An upper portion of the fins are reshaped and a second passivation layer is formed over the reshaped portion. Thereafter, a gate structure may be formed over the fins and source/drain regions may be formed.
52 Citations
20 Claims
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1. A method of forming a fin field effect transistor (FinFET), the method comprising:
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forming one or more fins extending from a substrate, each of the one or more fins having one or more semiconductor layers overlying the substrate, each of the one or more fins having a lattice constant different than a lattice constant of an underlying layer; forming a first passivation layer over the one or more fins; after forming the first passivation layer, forming isolation regions along opposing sidewalls of the one or more fins, the one or more fins extending above an uppermost surface of the isolation regions; reshaping exposed portions of the one or more fins; and forming a second passivation layer over the reshaped exposed portions of the one or more fins. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a fin field effect transistor (FinFET), the method comprising:
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forming a first passivation layer over a fin on a substrate, wherein the fin comprises a plurality of semiconductor layers having different lattice structures; after forming the first passivation layer, forming isolation regions along opposing sidewalls of the fin, an upper portion of the fin extending above an uppermost surface of the isolation regions; and reshaping the upper portion of the fin to form a reshaped portion of the fin. - View Dependent Claims (12, 13, 14, 15)
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16. A method of forming a fin field effect transistor (FinFET), the method comprising:
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forming a fin over a substrate, the fin having at least one semiconductor layer having a different lattice constant than a lattice constant of the substrate; forming a first passivation layer over the fin; after forming the first passivation layer, forming isolation regions along opposing sidewalls of the fin, an exposed portion of the fin being free of the isolation regions; reshaping the exposed portion of the fin; and forming a gate electrode over the exposed portion of the fin. - View Dependent Claims (17, 18, 19, 20)
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Specification