Semiconductor device and fabricating method thereof
First Claim
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1. A semiconductor device comprising:
- a substrate;
a plurality of lower electrodes formed on the substrate, wherein;
each lower electrode extends vertically upward away from the substrate,first lower electrodes of the plurality of lower electrodes include a bottom cylinder portion at a first height that has vertical walls on all sides and a top cylinder portion at a second height above the first height that also has vertical walls on all sides, andsecond lower electrodes of the plurality of lower electrodes include a bottom cylinder portion at the first height that has vertical walls on all sides and a top cylinder portion at the second height that has vertical walls on at least one side but no walls on at least part of the top cylinder portion;
a dielectric layer formed on the plurality of lower electrodes; and
an upper electrode formed on the plurality of lower electrodes and on the dielectric layer, wherein;
the upper electrode includes a first semiconductor compound layer and a second semiconductor compound layer sequentially stacked one on the other, and the first semiconductor compound layer has a crystallinity different from that of the second semiconductor compound layer,the first semiconductor compound layer is formed above portions of the second lower electrodes having no walls on at least part of the top cylinder portion and is not formed above the first lower electrodes; and
the first semiconductor compound layer is formed between the second lower electrodes and the second semiconductor compound layer.
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Abstract
Provided are a semiconductor device and a fabricating method thereof. The semiconductor device includes a storage electrode having a cylinder shape, a dielectric film formed on the storage electrode, and a plate electrode formed on the dielectric film, wherein the plate electrode includes a first semiconductor compound layer and a second semiconductor compound layer sequentially stacked one on the other, and the first semiconductor compound layer has a crystallinity different from that of the second semiconductor compound layer.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a substrate; a plurality of lower electrodes formed on the substrate, wherein; each lower electrode extends vertically upward away from the substrate, first lower electrodes of the plurality of lower electrodes include a bottom cylinder portion at a first height that has vertical walls on all sides and a top cylinder portion at a second height above the first height that also has vertical walls on all sides, and second lower electrodes of the plurality of lower electrodes include a bottom cylinder portion at the first height that has vertical walls on all sides and a top cylinder portion at the second height that has vertical walls on at least one side but no walls on at least part of the top cylinder portion; a dielectric layer formed on the plurality of lower electrodes; and an upper electrode formed on the plurality of lower electrodes and on the dielectric layer, wherein; the upper electrode includes a first semiconductor compound layer and a second semiconductor compound layer sequentially stacked one on the other, and the first semiconductor compound layer has a crystallinity different from that of the second semiconductor compound layer, the first semiconductor compound layer is formed above portions of the second lower electrodes having no walls on at least part of the top cylinder portion and is not formed above the first lower electrodes; and the first semiconductor compound layer is formed between the second lower electrodes and the second semiconductor compound layer. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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first storage electrodes and second storage electrodes adjacent to each other and each having a cylinder shape; a supporter pattern between the first storage electrodes and the second storage electrodes; a dielectric film on the first storage electrodes and the second storage electrodes; a recess on a portion of a sidewall of each of the first storage electrodes; and an upper electrode formed on the dielectric film, wherein the upper electrode includes a first semiconductor compound layer formed in the recess and a second semiconductor compound layer formed on the first semiconductor compound layer, and the first semiconductor compound layer and the second semiconductor compound layer have different compositions. - View Dependent Claims (6, 7, 8, 9, 10, 11, 19)
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12. A semiconductor device comprising:
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a storage electrode having a cylinder shape; a dielectric film on the storage electrode; and a plate electrode on the dielectric film, wherein the plate electrode includes a first semiconductor compound layer and a second semiconductor compound layer sequentially stacked one on the other, and the first semiconductor compound layer has a crystallinity different from that of the second semiconductor compound layer, wherein a recess is formed on a first sidewall of the storage electrode and a recess is not formed on a second sidewall of the storage electrode, and the first semiconductor compound layer is formed in the recess above the first sidewall and is not formed above the second sidewall. - View Dependent Claims (13, 14, 15, 16, 17, 18, 20)
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Specification