Method of forming a logic compatible flash memory

• US 9,287,282 B2
• Filed: 01/28/2014
• Issued: 03/15/2016
• Est. Priority Date: 01/28/2014
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Hsieh, Chia-Ta, Liu, Po-Wei, Tsair, Yong-Shiuan, Chiu, Chieh-Fei
• Primary Examiner(s): DANG, PHUC T
• Application Number:
  US14/166,431
• Publication Number:
  US 20150214237A1
• Time in Patent Office: 777 Days
• Field of Search: 438/4, 438/104, 257/5
• US Class Current: 1/1
• CPC Class Codes: H01L 21/28008 Making conductor-insulator-semiconductor electrodes
• CPC Class Codes: H01L 29/40114 the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
• CPC Class Codes: H01L 29/66825 with a floating gate H01L29/6684 takes precedence
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H10B 41/30 characterised by the memory core region
• CPC Class Codes: H10B 41/35 with a cell select transistor, e.g. NAND
• CPC Class Codes: H10B 41/41 of a memory region comprising a cell select transistor, e.g. NAND
• CPC Class Codes: H10B 41/50 characterised by the boundary region between the core region and the peripheral circuit region

Abstract

A method includes forming a first pad oxide layer and a second pad oxide layer over a first active region and a second active region, respectively, of a semiconductor substrate, forming a dielectric protection layer overlapping the first pad oxide layer, removing the second pad oxide layer, and forming a floating gate dielectric over the second active region. A floating gate layer is then formed to include a first portion over the dielectric protection layer, and a second portion over the floating gate dielectric. A planarization is performed on the first portion and the second portion of the floating gate layer. A blocking layer, a control gate layer, and a hard mask layer are formed over the second portion of the floating gate layer. The hard mask layer, the control gate layer, and the blocking layer are patterned to form a gate stack for a flash memory cell.

Claims

1. A method comprising:

forming a first pad oxide layer and a second pad oxide layer over a first active region and a second active region, respectively, of a semiconductor substrate;

forming a dielectric protection layer overlapping the first pad oxide layer;

removing the second pad oxide layer;

forming a floating gate dielectric over the second active region;

forming a floating gate layer, wherein the floating gate layer comprises a first portion over the dielectric protection layer, and a second portion over the floating gate dielectric;

performing a planarization on the first portion and the second portion of the floating gate layer;

forming a blocking layer, a control gate layer, and a hard mask layer over the second portion of the floating gate layer; and

patterning the hard mask layer, the control gate layer, and the blocking layer, wherein a remaining portion of the control gate layer forms a control gate.

2. The method of claim 1 further comprising:

after the patterning, removing the first portion of the floating gate layer.

3. The method of claim 2, wherein the removing the first portion of the floating gate layer comprises a blanket etching without forming a photolithography mask.

4. The method of claim 2 further comprising:

removing the first pad oxide layer;

forming a gate dielectric, a gate electrode, and gate spacers over the first active region; and

forming a source region and a drain region in the first active region, wherein the gate dielectric, the gate electrode, the gate spacers, and the source region and the drain region are comprised in a logic Metal-Oxide-Semiconductor (MOS) device.

5. The method of claim 1, wherein after the performing the planarization, a portion of the floating gate layer overlapping the first active region is fully removed, and wherein the floating gate layer further comprises a residue in a recess of the dielectric protection layer, with the residue overlapping a shallow trench isolation region adjoining the first active region.

6. The method of claim 5, wherein after the performing the planarization, a top surface of the residue is substantially level with a top surface of the dielectric protection layer.

7. The method of claim 1 further comprising:

after the patterning, forming a control gate spacer on a sidewall of the control gate; and

after the forming the control gate spacer, etching the floating gate layer to form a floating gate, wherein the control gate and the floating gate are comprised in a flash memory cell.

8. The method of claim 1, wherein the forming the dielectric protection layer comprises depositing a nitride layer.

9. The method of claim 8, wherein the forming the dielectric protection layer further comprises depositing an oxide layer over the nitride layer.

10. A method comprising:

forming a first pad oxide layer and a second pad oxide layer over a first active region and a second active region of a semiconductor substrate;

forming a dielectric protection layer comprising a first portion overlapping the first pad oxide layer and a second portion overlapping the second pad oxide layer;

forming an etching mask to cover the first portion of the dielectric protection layer;

removing the second portion of the dielectric protection layer and the second pad oxide layer;

removing the etching mask;

forming a floating gate dielectric over the second active region;

forming a floating gate layer, wherein the floating gate layer comprises a first portion over the first portion of the dielectric protection layer, and a second portion over the floating gate dielectric; and

performing a planarization on the first portion and the second portion of the floating gate layer, wherein after the planarization, the first portion of the floating gate layer is fully removed, and the first portion of the dielectric protection layer is exposed.

11. The method of claim 10 further comprising:

forming a blocking layer, a control gate layer, and a hard mask layer over the second portion of the floating gate layer;

patterning the hard mask layer, the control gate layer, and the blocking layer, wherein a remaining portion of the control gate layer forms a control gate;

removing the first pad oxide layer; and

forming a gate stack of a logic Metal-Oxide-Semiconductor (MOS) device over the first active region.

12. The method of claim 10, wherein the forming the dielectric protection layer comprises depositing a nitride layer.

13. The method of claim 12, wherein the forming the dielectric protection layer further comprises depositing an oxide layer over the nitride layer.

14. The method of claim 10, wherein after the performing the planarization, a portion of the floating gate layer overlapping the first active region is fully removed, and wherein the floating gate layer further comprises a residue in a recess of the dielectric protection layer, with the residue overlapping a shallow trench isolation region adjoining to the first active region.

15. The method of claim 14, wherein after the performing the planarization, a top surface of the residue is substantially level with a top surface of the dielectric protection layer.

16. A method comprising:

forming a dielectric protection layer over a semiconductor substrate, wherein the dielectric protection layer comprises;

a first portion overlapping a first active region of the semiconductor substrate;

a second portion overlapping a second active region of the semiconductor substrate; and

a third portion overlapping a Shallow Trench Isolation (STI) region, with the STI region having an edge contacting an edge of the first active region;

removing the second portion of the dielectric protection layer;

forming a floating gate dielectric over the second active region;

forming a floating gate layer comprising;

a first portion overlapping the first portion of the dielectric protection layer;

a second portion overlapping the floating gate dielectric; and

a third portion overlapping the third portion of the dielectric protection layer;

performing a planarization on the floating gate layer, wherein after the planarization, the first portion of the floating gate layer is removed, the second portion of the floating gate layer is thinned, and the third portion of the floating gate layer has a residue remaining;

patterning the floating gate layer to form a floating gate over the second active region; and

removing the residue.

17. The method of claim 16 further comprising:

forming a logic Metal-Oxide-Semiconductor (MOS) device on the first active region.

18. The method of claim 16, wherein after the planarization, a top surface of the residue is substantially level with a top surface of the first portion of the dielectric protection layer.

19. The method of claim 16, wherein the forming the dielectric protection layer comprises depositing a nitride layer.

20. The method of claim 16, wherein the removing the residue comprises blanket etching without using an etching mask.