Semiconductor structure with thin film resistor and terminal bond pad

• US 9,287,345 B2
• Filed: 08/29/2013
• Issued: 03/15/2016
• Est. Priority Date: 12/23/2008
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Chen, Fen, Gambino, Jeffrey P., He, Zhong-Xiang, Lee, Tom C., Malinowski, John C., Stamper, Anthony K.
• Primary Examiner(s): Wilczewski, Mary
• Application Number:
  US14/013,409
• Publication Number:
  US 20140001599A1
• Time in Patent Office: 929 Days
• Field of Search: 257/379, 257/532, 257/533, 257/536, 257/537, 257/758, 257/E21.535, 257/E27.116, 438/50, 438/210, 438/238, 438/330, 438/382, 438/384, 438/635
• US Class Current: 1/1
• CPC Class Codes: H01C 17/075 by thin film techniques H01C17/20 takes precedence
• CPC Class Codes: H01C 7/006 Thin film resistors
• CPC Class Codes: H01L 21/7685 the layer covering a conductive structure H01L21/76849 takes precedence
• CPC Class Codes: H01L 2224/0231 Manufacturing methods of the redistribution layers
• CPC Class Codes: H01L 2224/02313 Subtractive methods
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05546 Dual damascene structure
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 23/5228 Resistive arrangements or effects of, or between, wiring layers other resistive arrangements H01L23/647
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H01L 28/24 with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01016 : Sulfur [S]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19043 : being a resistor

Abstract

Disclosed are methods for forming a thin film resistor and terminal bond pad simultaneously. A method includes simultaneously forming a terminal bond pad on a terminal wire and a thin film resistor on two other wires.

Claims

1. A semiconductor structure, comprising:

a last wiring level including a terminal wire, two related wires, and another wire formed in a dielectric material layer;

at least one of a diffusion barrier layer and an isolation layer formed on the dielectric material layer;

a terminal bond pad formed on the terminal wire;

a thin film resistor formed on and conductively linking the two related wires;

a cap formed on the other wire;

a passivation layer formed over the terminal bond pad, the thin film resistor, and the cap; and

an opening formed in the passivation layer over the terminal bond pad,

wherein the terminal bond pad, the thin film resistor, and the cap are composed of portions of a common layer of refractory metal.

2. The semiconductor structure of claim 1, wherein the at least one of a diffusion barrier layer and an isolation layer comprises:

the diffusion barrier layer on and contacting the dielectric material layer; and

the isolation layer on and contacting the diffusion barrier layer.

3. The semiconductor structure of claim 2, wherein the terminal bond pad contacts a top surface of the terminal wire and a top surface of the isolation layer.

4. The semiconductor structure of claim 2, wherein the thin film resistor contacts a top surface of each of the two related wires and a top surface of the isolation layer.

5. The semiconductor structure of claim 1, wherein the refractory metal is composed of TaN.

6. The semiconductor structure of claim 1, wherein the passivation layer is composed of photosensitive polyimide.

7. The semiconductor structure of claim 1, further comprising a pad film on and contacting a top surface of the terminal bond pad.

8. The semiconductor structure of claim 7, wherein the passivation layer is over portions of the pad film.

9. The semiconductor structure of claim 7, wherein the pad film comprises aluminum.

10. The semiconductor structure of claim 1, wherein a top surface of the dielectric material layer between the two related wires is devoid of the diffusion barrier layer and the isolation layer.

11. The semiconductor structure of claim 10, wherein the thin film resistor is on and contacting the top surface of the dielectric material layer between the two related wires.

12. The semiconductor structure of claim 1, wherein an upper surface of the terminal wire is coplanar with an upper surface of the dielectric material layer.

13. The semiconductor structure of claim 1, wherein the cap is separate from the terminal bond bad and the resistor, and the cap directly contacts the other wire.

14. A semiconductor structure, comprising:

an intermediate wiring level comprising a first wire;

a barrier layer including at least one of a diffusion barrier layer and an isolation oxide layer formed over the intermediate wiring level;

a cap formed on an upper surface of the first wire;

a thin film resistor formed on the barrier layer;

a next wiring level formed over the cap and the thin film resistor;

a second wire formed in the next wiring level and in electrical contact with the cap;

third and fourth wires formed in the next wiring level and in electrical contact with the thin film resistor,

wherein the cap and the thin film resistor are composed of portions of a common layer of refractory metal.

15. The semiconductor structure of claim 14, wherein:

the barrier layer is on and contacting the intermediate wiring level; and

the isolation layer is on and contacting the barrier layer.

16. The semiconductor structure of claim 14, wherein the next wiring level is on and contacting the cap and the thin film resistor.

17. The semiconductor structure of claim 14, further comprising:

a first liner between the first wire and a dielectric material of the intermediate wiring level, wherein the first liner directly contacts the first wire and the dielectric material; and

a second liner between the second wire and the dielectric material, wherein the second liner directly contacts the second wire and the dielectric material.

18. A semiconductor structure, comprising:

an intermediate wiring level comprising a first wire;

a barrier layer including at least one of a diffusion barrier layer and an isolation oxide layer formed over the intermediate wiring level;

a cap formed on an upper surface of the first wire;

a thin film resistor formed on the barrier layer;

a next wiring level formed over the cap and the thin film resistor;

a second wire formed in the next wiring level and in electrical contact with the cap;

third and fourth wires formed in the next wiring level and in electrical contact with the thin film resistor,

wherein the cap and the thin film resistor are composed of portions of a common layer of refractory metal, and

the cap directly contacts the upper surface of the first wire.

19. A semiconductor structure, comprising:

a last wiring level including a terminal wire, two related wires. and another wire formed in a dielectric material layer;

at least one of a diffusion barrier layer and an isolation layer formed on the dielectric material layer;

a terminal bond pad formed on the terminal wire;

a thin film resistor formed on and conductively linking the two related wires;

a cap formed on the other wire;

a passivation layer formed over the terminal bond pad, the thin film resistor, and the cap; and

an opening formed in the passivation layer over the terminal bond pad,

wherein the terminal bond pad, the thin film resistor, and the cap are composed of portions of a common layer of refractory metal, and

the passivation layer is a different material than the at least one of the diffusion barrier layer and the isolation layer.