Method of manufacturing a semiconductor device including through silicon plugs
First Claim
1. A method of making a semiconductor device, the method comprising:
- forming a first opening and a second opening in a top surface of a substrate;
forming a conductive material in the first opening and in the second opening, the conductive material comprising a joined portion of the conductive material extending along the top surface, where the conductive material in the first opening and the conductive material in the second opening are electrically and thermally connected together;
reducing a thickness of the substrate from a second surface of the substrate, opposite the top surface, to expose the conductive material in the first opening and the conductive material in the second opening; and
connecting a device to the second surface of the substrate.
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Abstract
A method of making a semiconductor device, the method includes forming a first opening and a second opening in a substrate. The method further includes forming a conductive material in the first opening and in the second opening, the conductive material comprising a joined portion where the conductive material in the first opening and the conductive material in the second opening are electrically and thermally connected together at a first surface of the substrate. The method further includes reducing a thickness of the substrate from a second surface of the substrate, opposite the first surface, to expose the conductive material in the first opening and the conductive material in the second opening. The method further includes connecting a device to the second surface of the substrate.
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Citations
20 Claims
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1. A method of making a semiconductor device, the method comprising:
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forming a first opening and a second opening in a top surface of a substrate; forming a conductive material in the first opening and in the second opening, the conductive material comprising a joined portion of the conductive material extending along the top surface, where the conductive material in the first opening and the conductive material in the second opening are electrically and thermally connected together; reducing a thickness of the substrate from a second surface of the substrate, opposite the top surface, to expose the conductive material in the first opening and the conductive material in the second opening; and connecting a device to the second surface of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of making a semiconductor device, the method comprising:
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etching a top surface of a substrate to form a first opening and a second opening; forming an isolation layer in the first opening and the second opening, the isolation layer having a higher thermal resistance than the substrate; forming a continuous conductive material in both of the first opening and the second opening, wherein the isolation layer is located between conductive material and the substrate; forming a metal pad over the top surface of the substrate, wherein the metal pad is electrically and thermally connected to the conductive material in the first opening and the conductive material in the second opening; and bonding a device to the metal pad, wherein the metal pad is electrically and thermally connected to the device. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification