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Method of manufacturing a semiconductor device including through silicon plugs

  • US 9,287,440 B2
  • Filed: 07/15/2013
  • Issued: 03/15/2016
  • Est. Priority Date: 04/05/2010
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, the method comprising:

  • forming a first opening and a second opening in a top surface of a substrate;

    forming a conductive material in the first opening and in the second opening, the conductive material comprising a joined portion of the conductive material extending along the top surface, where the conductive material in the first opening and the conductive material in the second opening are electrically and thermally connected together;

    reducing a thickness of the substrate from a second surface of the substrate, opposite the top surface, to expose the conductive material in the first opening and the conductive material in the second opening; and

    connecting a device to the second surface of the substrate.

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