Semiconductor material doping
First Claim
1. A method of fabricating a group III nitride semiconductor structure including a quantum well and an adjacent barrier, the method comprising:
- selecting a group III nitride material for the adjacent barrier such that the adjacent barrier has a transparency of at least a target transparency to ultraviolet radiation of a target wavelength;
selecting a target valence band discontinuity between the quantum well and the adjacent barrier, a target quantum well doping level for a quantum well dopant in the quantum well, and a target barrier doping level for a barrier dopant in the adjacent barrier to facilitate a real space transfer of holes across the barrier; and
forming the quantum well and the adjacent barrier in the structure having an actual valence band discontinuity corresponding to the target valence band discontinuity, an actual quantum well doping level corresponding to the target quantum well doping level, and an actual barrier doping level corresponding to the target barrier doping level, wherein the adjacent barrier is formed of the selected group III nitride material.
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Abstract
A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).
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Citations
20 Claims
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1. A method of fabricating a group III nitride semiconductor structure including a quantum well and an adjacent barrier, the method comprising:
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selecting a group III nitride material for the adjacent barrier such that the adjacent barrier has a transparency of at least a target transparency to ultraviolet radiation of a target wavelength; selecting a target valence band discontinuity between the quantum well and the adjacent barrier, a target quantum well doping level for a quantum well dopant in the quantum well, and a target barrier doping level for a barrier dopant in the adjacent barrier to facilitate a real space transfer of holes across the barrier; and forming the quantum well and the adjacent barrier in the structure having an actual valence band discontinuity corresponding to the target valence band discontinuity, an actual quantum well doping level corresponding to the target quantum well doping level, and an actual barrier doping level corresponding to the target barrier doping level, wherein the adjacent barrier is formed of the selected group III nitride material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A device comprising:
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a radiation generating structure; and a superlattice layer at least partially transparent to radiation generated by the radiation generating structure, wherein the superlattice layer comprises; a quantum well having a quantum well doping level for a quantum well dopant; and an adjacent barrier formed of a group III nitride material selected such that the adjacent barrier has a transparency of at least a target transparency to the radiation generated by the radiation generating structure and having a barrier doping level for a barrier dopant, wherein a valence band discontinuity between the quantum well and the adjacent barrier in the structure, the quantum well doping level, and the target barrier doping level facilitate a real space transfer of holes across the barrier. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method of fabricating a deep ultraviolet light emitting device, the method comprising:
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forming a deep ultraviolet light generating structure; and forming a superlattice layer at least partially transparent to the deep ultraviolet radiation generated by the deep ultraviolet light generating structure, wherein the superlattice layer comprises; a quantum well having a quantum well doping level for a quantum well dopant; and an adjacent barrier formed of a group III nitride material selected such that the adjacent barrier has a transparency of at least a target transparency to the radiation generated by the radiation generating structure and having a barrier doping level for a barrier dopant, wherein a valence band discontinuity between the quantum well and the adjacent barrier in the structure, the quantum well doping level, and the target barrier doping level facilitate a real space transfer of holes across the barrier. - View Dependent Claims (18, 19, 20)
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Specification