Nitride semiconductor light-emitting device with a layer containing In and Mg and method for producing the same

• US 9,287,454 B2
• Filed: 10/08/2013
• Issued: 03/15/2016
• Est. Priority Date: 10/09/2012
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Kawashima, Takeshi
• Primary Examiner(s): Tran, Minh-Loan
• Assistant Examiner(s): KHAN, FARID H
• Application Number:
  US14/049,024
• Publication Number:
  US 20140097456A1
• Time in Patent Office: 889 Days
• US Class Current: 1/1
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/325 characterised by the doping materials
• CPC Class Codes: H01S 2301/17 Semiconductor lasers comprising special layers
• CPC Class Codes: H01S 2301/173 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
• CPC Class Codes: H01S 2304/04 MOCVD or MOVPE
• CPC Class Codes: H01S 5/11 Comprising a photonic bandgap structure
• CPC Class Codes: H01S 5/12 the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/3063 using Mg
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A method for producing a light-emitting device includes the steps of: forming a layer containing In on a substrate in a reactor in which a Mg-containing raw material has been used; and forming an active layer including a nitride semiconductor on the layer containing In.

Claims

1. A light-emitting device comprising:

a layer containing In and Mg;

an active layer comprising a nitride semiconductor; and

a p-type layer,

wherein the layer containing In and Mg, the active layer and the p-type layer are arranged in order from a side of a substrate.

2. The light-emitting device according to claim 1,

wherein a Mg concentration in the layer containing In and Mg decreases from the side of the substrate side to a side of the active-layer side.

3. The light-emitting device according to claim 1,

wherein the layer containing In and Mg has a thickness of 30 nm or more.

4. The light-emitting device according to claim 1,

wherein a distance between the substrate and the active layer is 1,000 nm or less.

5. The light-emitting device according to claim 1,

wherein the layer containing In and Mg comprises In_xGa_1-xN and the active layer comprises In_yGa_1-yN, where 0<

x<

y.

6. The light-emitting device according to claim 1, further comprising a first reflector and a second reflector,

wherein the active layer and the layer containing In and Mg are arranged between the first reflector and the second reflector.

7. The light-emitting device according to claim 6,

wherein at least one of the first reflector and the second reflector comprises a distributed Bragg reflector.

8. The light-emitting device according to claim 1, further comprising a diffraction grating.

9. The light-emitting device according to claim 1, further comprising a photonic crystal.

10. The light-emitting device according to claim 1,

wherein the layer containing In and Mg comprises a nitride semiconductor.

11. The light-emitting device according to claim 1,

wherein a distance between the substrate and the active layer is 500 nm or less.

12. The light-emitting device according to claim 1,

wherein a distance between the substrate and the active layer is 300 nm or less.