MEMS capping method

• US 9,290,378 B2
• Filed: 01/08/2015
• Issued: 03/22/2016
• Est. Priority Date: 04/21/2014
• Status: Active Grant

• Current Assignee: Semiconductor Manufacturing International Corporation
• Original Assignee: Semiconductor Manufacturing International Corporation
• Inventors: Chen, Xiaojun, Liu, Xuanjie, Guo, Liangliang, Ma, Junde, Jiang, Lushan
• Primary Examiner(s): Jackson, Jr., Jerome
• Assistant Examiner(s): SINGAL, ANKUSH K
• Application Number:
  US14/592,873
• Publication Number:
  US 20150298968A1
• Time in Patent Office: 439 Days
• US Class Current: 1/1
• CPC Class Codes: B81B 7/0058 for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 1/00825 Protect against mechanical threats, e.g. against shocks, or residues B81C1/00261 take precedence
• CPC Class Codes: B81C 2203/0109 Bonding an individual cap on the substrate

Abstract

A method for fabricating a MEMS device includes providing a substrate having a front surface and a back surface, and forming a protruding engagement member on the front surface of the substrate. The protruding engagement member has an inner periphery defining a groove and an outer periphery. The method also includes forming a first trench having a first depth along the outer periphery, forming a patterned mask layer on the protruding engagement member covering the groove and exposing a portion of the first trench. The method further includes etching the exposed portion of the first trench to form a second trench having a second depth, removing the patterned mask layer, bonding the substrate with a MEMS substrate to form the MEMS device, and thinning the back surface to within the second depth. The method prevents dust from being deposited on the MEMS substrate as in the case of cutting.

Claims

1. A method for fabricating a MEMS device, the method comprising:

providing a substrate having a front surface and a back surface;

forming a protruding engagement member on the front surface of the substrate, the protruding engagement member having an inner periphery defining a groove;

forming a first trench having a first depth along an outer periphery of the protruding engagement member;

forming a patterned mask layer on the protruding engagement member covering the engagement member including the groove and exposing a portion of the first trench;

etching the exposed portion of the first trench using the patterned mask layer as a mask to form a second trench having a second depth;

removing the patterned mask layer; and

bonding the substrate with a MEMS substrate to form the MEMS device.

2. The method of claim 1, wherein forming a protruding engagement member comprises:

forming an oxide layer on the first surface of the substrate;

forming a patterned mask on the oxide layer;

etching the oxide layer and the substrate using the patterned mask to form an engagement member body′

forming a bonding material layer on the engagement member body.

3. The method of claim 2, wherein the bonding material layer comprises germanium (Ge).

4. The method of claim 2, wherein the oxide layer has a thickness in a range from 1000 angstroms to 3000 angstroms, and the bonding material layer has a thickness in a range from 4000 angstroms to 6000 angstroms.

5. The method of claim 1, further comprising, prior to forming the second trench:

forming a metal layer on a sidewall surface of the protruding engagement member and on a surface of the first trench.

6. The method of claim 5, wherein the metal layer comprises titanium (Ti).

7. The method of claim 5, wherein the metal layer has a thickness in a range from 2000 angstroms to 4000 angstroms.

8. The method of claim 1, wherein etching the exposed portion of the first trench comprises a deep reactive ion etching process using a silicon hexafluoride (SF₆) gas, with a RF power to form a high ionization, under a pressure in the range from 20 mTorr to 8 Torr, the power of 600 W, 13.5 MHz, and a DC bias voltage is in the range from 500 V to 1000 V.

9. The method of claim 1, wherein the protruding engagement member is an enclosed structure.

10. The method of claim 9, wherein the enclosed structure has an annular shape.

11. The method of claim 9, wherein the enclosed structure has a polygonal shape.

12. The method of claim 9, wherein the enclosed structure has a square shape.

13. The method of claim 1, further comprising:

thinning the back surface so that the back surface is within the second depth of the second trench.

14. The method of claim 13, wherein thinning the back surface comprises grinding.

15. The method of claim 13, wherein thinning the back surface comprises etching.

16. The method of claim 1, wherein the second depth is greater than the first depth.