Method for manufacturing a thin-film semiconductor device using an etching solution for an aluminum oxide film
First Claim
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1. A manufacturing method of a thin-film semiconductor device, the manufacturing method comprising:
- forming an aluminum oxide film having film density of 2.80 g/cm3 to 3.25 g/cm3 above an oxide semiconductor layer;
providing a through-hole in the aluminum oxide film by etching the aluminum oxide film with use of an etching solution, the etching solution including phosphoric acid having concentration of 30% by weight to 80% by weight, nitric acid having concentration of 10% by weight or less, and surfactant having concentration of 0.0005% by weight to 0.0050% by weight; and
embedding, in the through-hole provided in the aluminum oxide film, an electrode to be electrically connected with the oxide semiconductor layer.
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Abstract
An etching solution includes: phosphoric acid having concentration of 30% by weight to 80% by weight; nitric acid having concentration of 10% by weight or less; and surfactant having concentration of 0.0005% by weight to 0.0050% by weight, wherein the etching solution is used for etching an aluminum oxide film having film density of 2.80 g/cm3 to 3.25 g/cm3.
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4 Claims
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1. A manufacturing method of a thin-film semiconductor device, the manufacturing method comprising:
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forming an aluminum oxide film having film density of 2.80 g/cm3 to 3.25 g/cm3 above an oxide semiconductor layer; providing a through-hole in the aluminum oxide film by etching the aluminum oxide film with use of an etching solution, the etching solution including phosphoric acid having concentration of 30% by weight to 80% by weight, nitric acid having concentration of 10% by weight or less, and surfactant having concentration of 0.0005% by weight to 0.0050% by weight; and embedding, in the through-hole provided in the aluminum oxide film, an electrode to be electrically connected with the oxide semiconductor layer. - View Dependent Claims (2, 3, 4)
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