Apparatus and method for sequentially resetting elements of a magnetic sensor array

• US 9,291,687 B2
• Filed: 07/14/2015
• Issued: 03/22/2016
• Est. Priority Date: 02/21/2011
• Status: Active Grant

• Current Assignee: Everspin Technologies Incorporated
• Original Assignee: Everspin Technologies Incorporated
• Inventors: Engel, Bradley, Mather, Phillip
• Primary Examiner(s): Hollington, Jermele M
• Assistant Examiner(s): CURTIS, SEAN M
• Application Number:
  US14/799,070
• Publication Number:
  US 20150316624A1
• Time in Patent Office: 252 Days
• Field of Search: 324/126, 324/249, 324/252, 324/207.21, 324/750.21, 324/754.17
• US Class Current: 1/1
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/0023 Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration G01R33/0017 takes precedence
• CPC Class Codes: G01R 33/09 Magnetoresistive devices
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G01R 33/098 comprising tunnel junctions, e.g. tunnel magnetoresistance sensors

Abstract

A semiconductor process and apparatus provide a high-performance magnetic field sensor with three differential sensor configurations which require only two distinct pinning axes, where each differential sensor is formed from a Wheatstone bridge structure with four unshielded magnetic tunnel junction sensor arrays, each of which includes a magnetic field pulse generator for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers to orient the magnetization in the correct configuration. prior to measurements of small magnetic fields. The field pulse is sequentially applied to groups of the sense layers of the Wheatstone bridge structures, thereby allowing for a higher current pulse or larger sensor array size for maximal signal to noise ratio.

Claims

1. A magnetic field sensor comprising:

a first bridge circuit including a first plurality of magnetic sense elements, the first plurality of magnetic sense elements including i groups of magnetic sense elements, wherein each group of the i groups of magnetic sense elements includes a plurality of magnetic sense elements to sense a magnetic field in a first direction;

a second bridge circuit including a second plurality of magnetic sense elements, the second plurality of magnetic sense elements including j groups of magnetic sense elements, wherein each group of the j groups of magnetic sense elements includes a plurality of magnetic sense elements to sense the magnetic field in a second direction; and

circuitry configured to generate a first plurality of current pulses and a second plurality of current pulses,

wherein the first plurality of current pulses is sequentially applied adjacent to each of the i groups of the first plurality of magnetic sense elements,

wherein sequential application of current pulses adjacent to the i groups of magnetic sense elements results in a larger current applied adjacent to each of the i groups of magnetic sense elements, for a given voltage, than if the first plurality of current pulses had been applied adjacent to the i groups of magnetic sense elements simultaneously, and

wherein the second plurality of current pulses is sequentially applied adjacent to each of the j groups of the second plurality of magnetic sense elements.

2. The magnetic field sensor of claim 1, wherein the second plurality of current pulses is sequentially applied after the first plurality of current pulses is sequentially applied.

3. The magnetic field sensor of claim 1, wherein the circuitry comprises:

current driver circuitry configured to sequentially generate and apply the first plurality of current pulses adjacent to each of the i groups of the first plurality of magnetic sense elements.

4. The magnetic field sensor of claim 3, wherein the current driver circuitry is further configured to sequentially generate and apply the second plurality of current pulses adjacent to each of the j groups of the second plurality of magnetic sense elements in response to a second control signal from the logic circuit.

5. The magnetic field sensor of claim 1, wherein sequential application of current pulses adjacent to the i and j groups of magnetic sense elements results in a larger current applied adjacent to each of the i and j groups of magnetic sense elements, for a given voltage, than if the first plurality and second plurality of current pulses had been applied adjacent to the i and j groups of magnetic sense elements simultaneously.

6. The magnetic field sensor of claim 3, wherein the first and second bridge circuits are located on a first chip and the current driver circuitry is located on a second chip.

7. The magnetic field sensor of claim 1, further comprising:

a third bridge circuit including a third plurality of magnetic sense elements, the third plurality of magnetic sense elements including k groups of magnetic sense elements, wherein each group of the k groups of magnetic sense elements includes a plurality of magnetic sense elements to sense the magnetic field in a third direction; and

wherein the circuitry is further configured to generate a third plurality of current pulses, the third plurality of current pulses sequentially applied adjacent to each of the k groups of the third plurality of magnetic sense elements.

8. The magnetic field sensor of claim 7, wherein the sequential application of current pulses adjacent to the i, j, and k groups of magnetic sense elements results in a larger current applied adjacent to each of the i, j, and k groups, for a given voltage, than if the first plurality, second plurality, and third plurality of current pulses had been applied adjacent to the i, j, and k groups of magnetic sense elements simultaneously.

9. The magnetic field sensor of claim 7, wherein the circuitry comprises:

current driver circuitry, in response to control signals from a logic circuit, configured to sequentially generate the first plurality, second plurality, and third plurality of current pulses and sequentially apply the first plurality, second plurality, and third plurality of current pulses adjacent to each of the i groups of the first plurality of magnetic sense elements, j groups of the second plurality of magnetic sense elements, and k groups of the third plurality of magnetic sense elements.

10. The magnetic field sensor of claim 9, wherein the first, second, and third bridge circuits are located on a first chip and the current driver circuitry is located on a second chip.

11. The magnetic field sensor of claim 1, wherein each magnetic sense element of the first and second plurality of magnetic sense elements further comprises:

a magnetic tunnel junction sensor having a first unshielded sense layer with an easy axis magnetic orientation corresponding to the first and second directions associated with the first and second plurality of magnetic sense elements.

12. The magnetic field sensor of claim 1, wherein each current pulse of the first and second plurality of current pulses includes a pulse duration of approximately 20-100 nanoseconds.

13. A method of operating a magnetic field sensor, the method comprising:

resetting a first group of magnetic sense elements of a first bridge circuit by sequentially applying current pulses to a first plurality of reset lines, wherein each reset line of the first plurality of reset lines is located adjacent to an associated magnetic sense element of the first group of magnetic sense elements, and wherein each magnetic sense element of the first group of magnetic sense elements senses a magnetic field in a first direction; and

resetting a second group of magnetic sense elements of a second bridge circuit by sequentially applying current pulses to a second plurality of reset lines, wherein each reset line of the second plurality of reset lines is located adjacent to an associated magnetic sense element of the second group of magnetic sense elements, and wherein each magnetic sense element of the second group of magnetic sense elements senses a magnetic field in a second direction.

14. The method of claim 13, wherein the sequential application of current pulses to the first plurality of reset lines provides a larger current applied to the first plurality of reset lines, for a given voltage, than if current pulses had been simultaneously applied to two or more reset lines of the first plurality of reset lines.

15. The method of claim 14, wherein the sequential application of current pulses to the second plurality of reset lines provides a larger current applied to the second plurality of reset lines, for a given voltage, than if current pulses had been simultaneously applied to two or more reset lines of the second plurality of reset lines.

16. The method of claim 13, wherein current pulses are sequentially applied to the first plurality of reset lines before current pulses are sequentially applied to the second plurality of reset lines.

17. The method of claim 13, further including:

resetting a third group of magnetic sense elements of a third bridge circuit by sequentially applying current pulses to a third plurality of reset lines, wherein each reset line of the third plurality of reset lines is located adjacent to an associated magnetic sense element of the third group of magnetic sense elements, and wherein each magnetic sense element of the third group of magnetic sense elements senses a magnetic field in a third direction.

18. The method of claim 17, wherein current pulses are sequentially applied to the first plurality of reset lines before current pulses are sequentially applied to the second plurality of reset lines, and

wherein current pulses are sequentially applied to the second plurality of reset lines before current pulses are sequentially applied to the third plurality of reset lines.

19. The method of claim 13, further comprising:

applying a first stabilization current adjacent to the first group of magnetic sense elements; and

measuring a response of the magnetic field sensor to components of a magnetic field along a first direction.

20. The method of claim 13, further comprising:

applying a second stabilization current adjacent to the second group of magnetic sense elements; and

measuring a response of the magnetic field sensor to components of a magnetic field along a second direction.

21. The method of claim 13, wherein applying current pulses to the first plurality of reset lines includes applying current pulses having a pulse duration of approximately 20-100 nanoseconds.

22. A magnetic field sensor comprising:

a first bridge circuit including a first plurality of magnetic sense elements configured to sense a magnetic field in a first direction, the first plurality of magnetic sense elements organized into i groups of magnetic sense elements, where i is at least 2;

a first reset line located adjacent to the i groups of magnetic sense elements;

a second bridge circuit including a second plurality of magnetic sense elements configured to sense a magnetic field in a second direction, the second plurality of magnetic sense elements organized into j groups of magnetic sense elements, where j is at least 2;

a second reset line located adjacent to the j groups of magnetic sense elements;

a third bridge circuit including a third plurality of magnetic sense elements configured to sense a magnetic field in a third direction, the third plurality of magnetic sense elements organized into k groups of magnetic sense elements, where k is at least 2;

a third reset line located adjacent to the k groups of magnetic sense elements; and

current driver circuitry configured to sequentially generate a plurality of current pulses for sequential application to the first, second, and third reset lines,

wherein the sequential application of current pulses to the first, second, and third reset lines results in a larger current applied adjacent to each of the i, j, and k groups of magnetic sense elements, for a given voltage, than if current pulses had been applied to the first, second, and third reset lines simultaneously.

23. The magnetic field sensor of claim 22, further comprising:

a logic circuit configured to generate control signals; and

one or more a contact pads configured to receive current pulses,

wherein the first, second, and third bridge circuits are located on a first chip and the logic circuit and current driver circuitry are located on a second chip.

24. The magnetic field sensor of claim 22, wherein each current pulse of the plurality of current pulses has a pulse duration of approximately 20-100 nanoseconds.