Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same
First Claim
Patent Images
1. A resist underlayer composition, comprising:
- a solvent;
a cross-linking catalyst, the cross-linking catalyst including at least one of pyridinium p-toluenesulfonate, amidosulfobetain-16, ammonium(-)-camphor-10-sulfonic acid ammonium salt, ammonium formate, alkyltriethylammonium formate, pyridinium formate, tetrabutyl ammonium acetate, tetrabutyl ammonium azide, tetrabutyl ammonium benzoate, tetrabutyl ammonium bisulfate, tetrabutyl ammonium bromide, tetrabutyl ammonium chloride, tetrabutyl ammonium cyanide, tetrabutyl ammonium fluoride, tetrabutyl ammonium iodide, tetrabutyl ammonium sulfate, tetrabutyl ammonium nitrate, tetrabutyl ammonium nitrite, tetrabutyl ammonium p-toluene sulfonate, and tetrabutyl ammonium phosphate; and
an organosilane polymer, the organosilane polymer being a condensation polymerization product of;
at least one first compound represented by Chemical Formula 1 or 2, andat least one second compound represented by any one of Chemical Formulae 3 to 5wherein the at least one first compound represented by Chemical Formula 1 or 2 includes at least one compound represented by Chemical Formula 1, and the at least one second compound represented by any one of Chemical Formulae 3 to 5 includes at least one compound represented by Chemical Formula 3, at least one compound represented by Chemical Formula 4, and at least one compound represented by Chemical Formula 5;
[R1]3Si-[Ph1]1-Si[R2]3
[Chemical Formula 1]
[R1]3Si-[Ph1]m-Ph2
[Chemical Formula 2]
[R1]3Si—
(CH2)n—
R3
[Chemical Formula 3]
[R1]3Si—
R4
[Chemical Formula 4]
[R1]3Si—
X—
Si[R2]3
[Chemical Formula 5]wherein, in Chemical Formulae 1 to 5;
Ph1 is a substituted or unsubstituted phenylene group,Ph2 is a substituted or unsubstituted phenyl group,R1 and R2 are each independently a halogen, a hydroxyl group, an alkoxy group, a carboxyl group, an ester group, a cyano group, a haloalkylsulfite group, an alkylamine group, an alkylsilylamine group, or an alkylsilyloxy group,R3 is a substituted or unsubstituted C6 to C12 aryl group,R4 is hydrogen or a C1 to C6 alkyl group,X is a substituted or unsubstituted linear alkylene group, a substituted or unsubstituted branched alkylene group, or an alkylene group including an alkenylene group, an alkynylene group, a heterocyclic group, a urea group, or an isocyanurate group in its main chain,l is an integer of 2 to 4, and m is an integer of 1 to 4, andn is an integer of 0 to 5.
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Abstract
A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
19 Citations
13 Claims
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1. A resist underlayer composition, comprising:
-
a solvent; a cross-linking catalyst, the cross-linking catalyst including at least one of pyridinium p-toluenesulfonate, amidosulfobetain-16, ammonium(-)-camphor-10-sulfonic acid ammonium salt, ammonium formate, alkyltriethylammonium formate, pyridinium formate, tetrabutyl ammonium acetate, tetrabutyl ammonium azide, tetrabutyl ammonium benzoate, tetrabutyl ammonium bisulfate, tetrabutyl ammonium bromide, tetrabutyl ammonium chloride, tetrabutyl ammonium cyanide, tetrabutyl ammonium fluoride, tetrabutyl ammonium iodide, tetrabutyl ammonium sulfate, tetrabutyl ammonium nitrate, tetrabutyl ammonium nitrite, tetrabutyl ammonium p-toluene sulfonate, and tetrabutyl ammonium phosphate; and an organosilane polymer, the organosilane polymer being a condensation polymerization product of; at least one first compound represented by Chemical Formula 1 or 2, and at least one second compound represented by any one of Chemical Formulae 3 to 5 wherein the at least one first compound represented by Chemical Formula 1 or 2 includes at least one compound represented by Chemical Formula 1, and the at least one second compound represented by any one of Chemical Formulae 3 to 5 includes at least one compound represented by Chemical Formula 3, at least one compound represented by Chemical Formula 4, and at least one compound represented by Chemical Formula 5;
[R1]3Si-[Ph1]1-Si[R2]3
[Chemical Formula 1]
[R1]3Si-[Ph1]m-Ph2
[Chemical Formula 2]
[R1]3Si—
(CH2)n—
R3
[Chemical Formula 3]
[R1]3Si—
R4
[Chemical Formula 4]
[R1]3Si—
X—
Si[R2]3
[Chemical Formula 5]wherein, in Chemical Formulae 1 to 5; Ph1 is a substituted or unsubstituted phenylene group, Ph2 is a substituted or unsubstituted phenyl group, R1 and R2 are each independently a halogen, a hydroxyl group, an alkoxy group, a carboxyl group, an ester group, a cyano group, a haloalkylsulfite group, an alkylamine group, an alkylsilylamine group, or an alkylsilyloxy group, R3 is a substituted or unsubstituted C6 to C12 aryl group, R4 is hydrogen or a C1 to C6 alkyl group, X is a substituted or unsubstituted linear alkylene group, a substituted or unsubstituted branched alkylene group, or an alkylene group including an alkenylene group, an alkynylene group, a heterocyclic group, a urea group, or an isocyanurate group in its main chain, l is an integer of 2 to 4, and m is an integer of 1 to 4, and n is an integer of 0 to 5. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A resist underlayer composition, comprising:
-
a solvent; a cross-linking catalyst, the cross-linking catalyst including at least one of pyridinium p-toluenesulfonate, amidosulfobetain-16, ammonium(-)-camphor-10-sulfonic acid ammonium salt, ammonium formate, alkyltriethylammonium formate, pyridinium formate, tetrabutyl ammonium acetate, tetrabutyl ammonium azide, tetrabutyl ammonium benzoate, tetrabutyl ammonium bisulfate, tetrabutyl ammonium bromide, tetrabutyl ammonium chloride, tetrabutyl ammonium cyanide, tetrabutyl ammonium fluoride, tetrabutyl ammonium iodide, tetrabutyl ammonium sulfate, tetrabutyl ammonium nitrate, tetrabutyl ammonium nitrite, tetrabutyl ammonium p-toluene sulfonate, and tetrabutyl ammonium phosphate; and an organosilane polymer, the organosilane polymer including a repeating unit represented by Chemical Formula 6;
(SiO1.5-[Ph1]1-SiO1.5)a(Ph2-[Ph1]m-SiO1.5)b(R3—
(CH2)n—
SiO1.5)c(R4—
SiO1.5)d(SiO1.5—
X—
SiO1.5)e
[Chemical Formula 6]wherein, in Chemical Formula 6; Ph1 is a substituted or unsubstituted phenylene group, Ph2 is a substituted or unsubstituted phenyl group, R3 is a substituted or unsubstituted C6 to C12 aryl group, R4 is hydrogen or a C1 to C6 alkyl group, X is a substituted or unsubstituted linear alkylene group, a substituted or unsubstituted branched alkylene group, or an alkylene group including an alkenylene group, an alkynylene group, a heterocyclic group, a urea group, or an isocyanurate group in its main chain, l is an integer of 2 to 4, and m is an integer of 1 to 4, n is an integer of 0 to 5, and a, b, c, d, and e satisfy the relations;
0<
a≦
0.99, 0≦
b≦
0.99, 0.01≦
a+b≦
0.99, 0<
c≦
0.99, 0<
d≦
0.99, 0<
e≦
0.99, 0.01≦
c+d+e≦
0.99, and a+b+c+d+e=1.
-
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11. A resist underlayer, comprising:
-
an organosilane polymer including a repeating unit represented by Chemical Formula 6;
(SiO1.5-[Ph1]1-SiO1.5)a(Ph2-[Ph1]m-SiO1.5)b(R3—
(CH2)n—
SiO1.5)c(R4—
SiO1.5)d(SiO1.5—
X—
SiO1.5)e
[Chemical Formula 6]wherein, in Chemical Formula 6; Ph1 is a substituted or unsubstituted phenylene group, Ph2 is a substituted or unsubstituted phenyl group, R3 is a substituted or unsubstituted C6 to C12 aryl group, R4 is hydrogen or a C1 to C6 alkyl group, X is a substituted or unsubstituted linear alkylene group, a substituted or unsubstituted branched alkylene group, or an alkylene group including an alkenylene group, an alkynylene group, a heterocyclic group, a urea group, or an isocyanurate group in its main chain, l is an integer of 2 to 4, and m is an integer of 1 to 4, n is an integer of 0 to 5, and a, b, c, d, and e satisfy the relations;
0<
a≦
0.99, 0≦
b≦
0.99, 0.01≦
a+b≦
0.99, 0<
c≦
0.99, 0<
d≦
0.99, 0<
e≦
0.99, 0.01≦
c+d+e≦
0.99, and a+b+c+d+e=1. - View Dependent Claims (12)
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13. A resist underlayer composition, comprising:
-
a solvent; a cross-linking catalyst; and an organosilane polymer, the organosilane polymer being a condensation polymerization product of bis(triethoxysilyl)biphenyl, phenyltrimethoxysilane, and methyltrimethoxysilane.
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Specification