Plasma processing apparatus
First Claim
1. A plasma processing apparatus comprising:
- a processing chamber having a dielectric window;
a substrate holding unit configured to hold thereon a processing target substrate within the processing chamber;
a processing gas supply unit configured to supply a processing gas into the processing chamber to perform a plasma process on the substrate;
a RF antenna, provided outside the dielectric window to generate plasma of the processing gas within the processing chamber by inductive coupling, having a plurality of coil segments that are arranged along a loop having a predetermined shape and a predetermined size while electrically connected to each other in parallel;
a high frequency power supply unit configured to supply a high frequency power having a frequency for generating a high frequency electric discharge of the processing gas;
at least one floating coil that is in an electrically floating state and provided outside the processing chamber to be coupled to the RF antenna by an electromagnetic induction; and
a capacitor provided in a loop of the at least one floating coil,wherein an angular frequency on a radius of the at least one floating coil is denoted by ω
, a mutual inductance between the RF antenna and the at least one floating coil is denoted by M, an antenna current flowing in the RF antenna is denoted by IRF, a self-inductance of the at least one floating coil is denoted by L, and an electrostatic capacitance of the capacitor is denoted by C, and an induced current IIND flowing in the at least one floating coil is expressed by an approximation equation;
IIND≈
−
Mω
IRF/(Lω
1/Cω
), andthe at least one floating coil and the RF antenna are arranged on the same plane.
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Accused Products
Abstract
In an inductively coupled plasma processing apparatus, it is possible to control a plasma density distribution while suppressing a wavelength effect within a RF antenna. Provided at a ceiling of a chamber 10 or above a dielectric window 52 is a circular ring-shaped RF antenna 54 for generating inductively coupled plasma within the chamber 10. This RF antenna 54 includes two coil segments 84(1) and 84(2) each having a semicircular arc shape. The coil segments 84(1) and 84(2) are electrically connected to each other in parallel with respect to a high frequency power supply unit 62. On the dielectric window 52, a circular ring-shaped floating coil 60 having a variable capacitor 58 coupled to the RF antenna 54 by an electromagnetic induction is provided. The variable capacitor 58 is varied in a certain range by a capacitance varying unit 82 under the control of a main controller 80.
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Citations
27 Claims
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1. A plasma processing apparatus comprising:
-
a processing chamber having a dielectric window; a substrate holding unit configured to hold thereon a processing target substrate within the processing chamber; a processing gas supply unit configured to supply a processing gas into the processing chamber to perform a plasma process on the substrate; a RF antenna, provided outside the dielectric window to generate plasma of the processing gas within the processing chamber by inductive coupling, having a plurality of coil segments that are arranged along a loop having a predetermined shape and a predetermined size while electrically connected to each other in parallel; a high frequency power supply unit configured to supply a high frequency power having a frequency for generating a high frequency electric discharge of the processing gas; at least one floating coil that is in an electrically floating state and provided outside the processing chamber to be coupled to the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the at least one floating coil, wherein an angular frequency on a radius of the at least one floating coil is denoted by ω
, a mutual inductance between the RF antenna and the at least one floating coil is denoted by M, an antenna current flowing in the RF antenna is denoted by IRF, a self-inductance of the at least one floating coil is denoted by L, and an electrostatic capacitance of the capacitor is denoted by C, and an induced current IIND flowing in the at least one floating coil is expressed by an approximation equation;
IIND≈
−
Mω
IRF/(Lω
1/Cω
), andthe at least one floating coil and the RF antenna are arranged on the same plane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification