Method of forming silicon film

• US 9,293,323 B2
• Filed: 12/27/2013
• Issued: 03/22/2016
• Est. Priority Date: 12/27/2012
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Obu, Tomoyuki, Miyahara, Takahiro, Nagata, Tomoyuki
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US14/141,620
• Publication Number:
  US 20140187025A1
• Time in Patent Office: 816 Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/0218 in a reactive atmosphere C23C16/0227 takes precedence
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

Provided is a method of forming a film including a silicon film on a base, including: forming a seed layer on a surface of the base by heating the base and supplying an aminosilane-based gas onto the surface of the heated base; and forming the silicon film on the seed layer by heating the base and supplying a silane-based gas containing no amino group onto the seed layer of the surface of the heated base, wherein a molecule of the aminosilane-based gas used in forming a seed layer comprises two or more silicon atoms.

Claims

1. A method of forming a film including a silicon film on a base, comprising:

forming a seed layer on a surface of the base by heating the base and supplying an aminosilane-based gas onto the heated base surface; and

forming the silicon film on the seed layer by heating the base and supplying a silane-based gas containing no amino group onto the seed layer of the surface of the heated base,

wherein a molecule of the aminosilane-based gas used in forming a seed layer comprises two or more silicon atoms, and

wherein the aminosilane-based gas containing two or more silicon atoms in the aminosilane-based gas molecule is selected from gases containing at least one of amino silicon compounds represented by the following formula;

((R1R2)N)_nSi_XH<sub>2X−

n−

m</sub>(R3)_m;

 

 

(B)

wherein in Formula (B),

n is the number of amino groups, which is a natural number of 1 to 6,

m is the number of alkyl groups, which is 0 or a natural number of 1 to 5,

R1=CH₃, R2=C₂H₅ and R3=C₃H₇,

R1=R2=R3, or they may not be the same,

R3=Cl, and

X is a natural number of not less than 2.

2. The method of claim 1, wherein the aminosilane-based gas represented by Formula (B) includes:

diisopropylaminocyclodisilane (Si₂H₃N(iPr)₂),

diisopropylaminocyclotrisilane (Si₃H₅N(iPr)₂),

diisopropylaminodichlorocyclodisilane (Si₂H₂ClN(iPr)₂), and

diisopropylaminodichlorocyclotrisilane (Si₃H₄ClN(iPr)₂).

3. The method of claim 1, wherein a heating temperature of the base in forming a seed layer is lower than a heating temperature of the base in forming the silicon film, and a processing time for forming the seed layer in forming a seed layer is shorter than a processing time for forming the silicon film in forming the silicon film.

4. The method of claim 3, wherein a heating temperature of the base in forming a seed layer is not less than 300 degrees C. and not more than 350 degrees C.

5. The method of claim 4, wherein the seed layer includes a monoatomic adsorption layer.

6. The method of claim 1, wherein a combined film thickness of the seed layer and the silicon film is a finite value of not more than 2 nm order.

7. The method of claim 1, wherein the silane-based gas containing no amino group is selected from gases containing at least one of silicon hydrides represented by the following formulas:

Si_XH_2X+2 (wherein X is a natural number of not less than

     1) 

 

(C),

or

Si_XH_2X (wherein X is a natural number of not less than

     1) 

 

(D).

8. The method of claim 7, wherein the silicon hydride represented by Formula (C) is selected from at least one of:

monosilane (SiH₄),

disilane (Si₂H₆),

trisilane (Si₃H₈),

tetrasilane (Si₄H₁₀),

pentasilane (Si₅H₁₂),

hexasilane (Si₆H₁₄), and

heptasilane (Si₇H₁₆).

9. The method of claim 7, wherein the silicon hydride represented by Formula (D) is selected from at least one of:

cyclosilane (SiH₂),

cyclodisilane (Si₂H₄),

cyclotrisilane (Si₃H₆),

cyclotetrasilane (Si₄H₈),

cyclopentasilane (Si₅H₁₀),

cyclohexasilane (Si₆H₁₂), and

cycloheptasilane (Si₇H₁₄).