Conductive interconnect structures and formation methods using supercritical fluids

• US 9,293,367 B2
• Filed: 08/29/2011
• Issued: 03/22/2016
• Est. Priority Date: 06/28/2005
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sulfridge, Marc
• Primary Examiner(s): Slutsker, Julia
• Application Number:
  US13/220,266
• Publication Number:
  US 20110309506A1
• Time in Patent Office: 1,667 Days
• Field of Search: 438/618, 438/639, 438/640, 438/643, 257/E21.577, 257/E21.578, 257/E21.585, 257/751, 257/758, 257/774
• US Class Current: 1/1
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05 of an individual bonding area
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 27/14601 Structural or functional details thereof
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 2924/014 Solder alloys

Abstract

Conductive interconnect structures and formation methods using supercritical fluids are disclosed. A method in accordance with one embodiment of the invention includes forming a via in a substrate, with the via having a width and a length generally transverse to the width, and with a length being approximately 100 microns or more. The method can further include disposing a conductive material in the via while the via is exposed to a supercritical fluid. For example, copper can be disposed in the via by introducing a copper-containing precursor into the supercritical fluid and precipitating the copper from the supercritical fluid. Interconnect structures can be formed using this technique in a single generally continuous process, and can produce conductive structures having a generally uniform grain structure across the width of the via.

Claims

1. A microfeature workpiece device, comprising:

a substrate having a first side and a second side opposite from the first side;

a first dielectric material at least partially covering the first side of the substrate;

a second dielectric material at least partially covering the first dielectric material;

a tapered via bounded by wall portions of the substrate and extending through the substrate, the first dielectric material and the second dielectric material, a first end of the tapered via having a first diameter and being proximate to the first side of the substrate, a second end of the tapered via having a second diameter smaller than the first diameter and terminating at the second side of the substrate, the wall portions of the via being spaced apart by a width of the via, the via further having—

a third dielectric material being generally conformal to and in contact with the wall portions of the substrate, the third dielectric material and the second dielectric material being different,

a barrier material being generally conformal to and in contact with the third dielectric material,

a first conductive material being generally conformal to and in contact with the barrier material, and

a second conductive material being generally conformal to and in contact with the first conductive material;

a conductive fill material disposed in the via in contact with the second conductive material, the conductive fill material having a generally uniform grain structure within the via,

wherein the third dielectric material, the barrier material, the first conductive material, and the second conductive material terminate at the second side of the substrate, wherein the first dielectric material contacts the third dielectric material, and wherein the second dielectric material contacts the barrier material.

2. The device of claim 1 wherein the conductive fill material is disposed in the via without a seed material located in the via.

3. The device of claim 1 wherein the substrate has a first side, a second side facing away from the first side, and wherein the via extends through the substrate from the first side to the second side.

4. The device of claim 1, further comprising an integrated circuit and a sensor coupled to the integrated circuit, and wherein the integrated circuit is electrically coupled to the conductive fill material in the via.

5. The device of claim 1 wherein the conductive fill material includes at least a portion of a through-wafer interconnect.

6. The device of claim 1 wherein the conductive fill material includes at least a portion of a through-wafer interconnect, and wherein the through-wafer interconnect further includes a first conductive structure electrically coupled to a feature within the substrate, and a second conductive structure electrically coupled to a feature external to the substrate.

7. The device of claim 1 wherein the conductive fill material includes at least one of copper and a copper compound.

8. The device of claim 1 wherein the conductive fill material is generally homogeneous.

9. The device of claim 1 wherein the conductive fill material does not include solder.

10. The device of claim 1 wherein an aspect ratio of the via is at least 1:

1.

11. The device of claim 1 wherein the substrate has an integrated circuit between the first and second sides of the substrate, and wherein the integrated circuit is electrically connected to the conductive fill material in the via.

12. The device of claim 1 wherein the barrier material includes tungsten.

13. The device of claim 1, further comprising a seed material between the barrier material and the first conductive material, the seed material being generally conformal to and in contact with the first conductive material on one side and the barrier material on the other side.

14. The device of claim 13 wherein the seed material includes copper.

15. The device of claim 13 wherein the seed material is about 2000 angstroms thick.

16. The device of claim 1 wherein the first conductive material includes copper and the second conductive material includes nickel.

17. A microfeature workpiece device, comprising:

a substrate having a first side and a second side opposite from the first side;

a first dielectric material at least partially covering the first side of the substrate;

a second dielectric material having a first face at least partially covering the first dielectric material and a second face opposite from the first face;

a tapered via bounded by wall portions of the substrate and extending through the substrate, the first dielectric material and the second dielectric material, a first end of the tapered via having a first diameter and being proximate to the first side of the substrate, a second end of the tapered via having a second diameter smaller than the first diameter and terminating at the second side of the substrate, the wall portions of the via being spaced apart by a width of the via, the via further having—

a third dielectric material being generally conformal to and in contact with the wall portions of the substrate,

a barrier material being generally conformal to and in contact with the third dielectric material,

a first conductive material being generally conformal to and in contact with the barrier material, and

a second conductive material being generally conformal to and in contact with the first conductive material;

a conductive fill material disposed in the via in contact with the second conductive material, the conductive fill material having a generally uniform grain structure within the via,

wherein the third dielectric material, the barrier material, the first conductive material, and the second conductive material terminate at the second side of the substrate, wherein the barrier material, the first conductive material, and the second conductive material terminate at the second face of the second dielectric material, wherein the first dielectric material contacts the third dielectric material, and wherein the second dielectric material contacts the barrier material.