Wafer level packaging bond
First Claim
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1. A device, comprising:
- a micro-electro-mechanical systems (MEMS) device, disposed on a first substrate;
a semiconductor device, disposed on a second substrate; and
a bond electrically connecting the MEMS device and the semiconductor device, wherein the bond includes an interface between a first bonding layer of amorphous silicon and a second bonding layer including aluminum, and the interface is inside an opening of the semiconductor device.
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Abstract
A device is described in one embodiment that includes a micro-electro-mechanical systems (MEMS) device disposed on a first substrate and a semiconductor device disposed on a second substrate. A bond electrically connects the MEMS device and the semiconductor device. The bond includes an interface between a first bonding layer including silicon on the first substrate and a second bonding layer including aluminum on the second substrate. The physical interface between the aluminum and silicon (e.g., amorphous silicon) can provide an electrical connection.
9 Citations
19 Claims
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1. A device, comprising:
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a micro-electro-mechanical systems (MEMS) device, disposed on a first substrate; a semiconductor device, disposed on a second substrate; and a bond electrically connecting the MEMS device and the semiconductor device, wherein the bond includes an interface between a first bonding layer of amorphous silicon and a second bonding layer including aluminum, and the interface is inside an opening of the semiconductor device. - View Dependent Claims (2, 3, 4)
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5. A device, comprising:
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a first substrate having a complementary metal oxide semiconductor (CMOS) device and a first layer of amorphous silicon; and a second substrate having another semiconductor device and a second layer of aluminum, wherein the first layer of amorphous silicon and the second layer of aluminum physically interface in a bond. - View Dependent Claims (6, 7, 8, 9, 10, 11)
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12. A device, comprising:
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a first semiconductor device disposed on a first substrate and a second semiconductor device disposed on a second substrate; and a bond between the first substrate and the second substrate, wherein the bond includes an interface between a first bonding layer of amorphous silicon on the first substrate and a second bonding layer including aluminum on the second substrate, and the interface is inside an opening in the second substrate. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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Specification