Semiconductor device and display device including the semiconductor device

• US 9,293,480 B2
• Filed: 07/03/2014
• Issued: 03/22/2016
• Est. Priority Date: 07/10/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Miyake, Hiroyuki, Sato, Takahiro, Jintyou, Masami
• Primary Examiner(s): Nguyen, Dao H
• Application Number:
  US14/323,341
• Publication Number:
  US 20150014680A1
• Time in Patent Office: 628 Days
• Field of Search: 257/43, 257/53, 257/57, 257/72, 257/E27.111, 257/E29.151, 257/E29.296, 349/47, 349/141, 349/152, 349/147, 438/34, 438/104, 438/128, 438/149
• US Class Current: 1/1
• CPC Class Codes: G02F 1/13306 Circuit arrangements or driving methods for the control of single liquid crystal cells G02F1/132, G02F1/133382 take precedence
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/13338 Input devices, e.g. touch panels
• CPC Class Codes: G02F 1/134336 Matrix
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: G06F 2203/04103 Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
• CPC Class Codes: G06F 3/041 Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.

Claims

1. A semiconductor device comprising:

a first wiring;

a second wiring;

a third wiring electrically connecting the first wiring and the second wiring; and

a transistor comprising;

a semiconductor film including a channel formation region; and

a source electrode and a drain electrode electrically connected to the semiconductor film,

wherein the second wiring, the source electrode and the drain electrode are provided on a same surface,

wherein each end portion of the second wiring, the source electrode and the drain electrode comprises an upper end portion and a lower end portion, and

wherein a distance between the upper end portion and the lower end portion of the second wiring is longer than a distance between the upper end portion and the lower end portion of each of the source electrode and the drain electrode.

2. The semiconductor device according to claim 1,

wherein the transistor further comprises a gate electrode overlapping with the semiconductor film with an insulating film provided therebetween, and

wherein the first wiring and the gate electrode are provided on a same surface.

3. The semiconductor device according to claim 1, further comprising a pixel electrode over and electrically connected to the source electrode or the drain electrode,

wherein the third wiring and the pixel electrode are provided on a same surface.

4. The semiconductor device according to claim 1, wherein at least one of a tip of the first wiring and a tip of the second wiring has a circular shape in a top view.

5. The semiconductor device according to claim 1, wherein a side surface of the second wiring has a stepwise shape.

6. The semiconductor device according to claim 1,

wherein the semiconductor film is an oxide semiconductor film comprising an In-M-Zn oxide, and

wherein M is Al, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf.

7. A display device comprising the semiconductor device according to claim 1.

8. The semiconductor device according to claim 1, wherein an angle formed by a bottom surface and a side surface of the second wiring is smaller than that of each of the source electrode and the drain electrode.

9. A semiconductor device comprising:

a first wiring;

a second wiring;

a third wiring electrically connecting the first wiring and the second wiring; and

a transistor comprising;

a semiconductor film including a channel formation region;

a gate electrode overlapping with the semiconductor film with a first insulating film provided therebetween; and

a source electrode and a drain electrode electrically connected to the semiconductor film,

a second insulating film over the transistor and the second wiring; and

a pixel electrode over the second insulating film and electrically connected to the source electrode or the drain electrode,

wherein the second wiring, the source electrode and the drain electrode are provided on a same surface,

wherein each end portion of the second wiring, the source electrode and the drain electrode comprises an upper end portion and a lower end portion, and

wherein a distance between the upper end portion and the lower end portion of the second wiring is longer than a distance between the upper end portion and the lower end portion of each of the source electrode and the drain electrode.

10. The semiconductor device according to claim 9,

wherein the first wiring and the gate electrode are provided on a same surface, and

wherein the third wiring and the pixel electrode are provided on a same surface.

11. The semiconductor device according to claim 9, wherein at least one of a tip of the first wiring and a tip of the second wiring has a circular shape in a top view.

12. The semiconductor device according to claim 9, wherein a side surface of the second wiring has a stepwise shape.

13. The semiconductor device according to claim 9,

wherein the semiconductor film is an oxide semiconductor film comprising an In-M-Zn oxide, and

wherein M is Al, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf.

14. The semiconductor device according to claim 9,

wherein the gate electrode is a first gate electrode, and

wherein the transistor further comprises a second gate electrode overlapping with the first gate electrode with the semiconductor film provided therebetween.

15. A display device comprising the semiconductor device according to claim 9.

16. The semiconductor device according to claim 9, wherein an angle formed by a bottom surface and a side surface of the second wiring is smaller than that of each of the source electrode and the drain electrode.

17. A semiconductor device comprising:

a first wiring;

a second wiring;

a third wiring electrically connecting the first wiring and the second wiring; and

a transistor comprising;

a gate electrode;

a first insulating film over the gate electrode and the first wiring;

a semiconductor film including a channel formation region over the first insulating film; and

a source electrode and a drain electrode over and electrically connected to the semiconductor film;

a second insulating film over the transistor and the second wiring; and

a pixel electrode over the second insulating film and electrically connected to the source electrode or the drain electrode,

wherein the first wiring and the gate electrode are provided on a same surface,

wherein the second wiring, the source electrode and the drain electrode are provided on a same surface,

wherein the third wiring is in contact with the first wiring through a first opening in the first insulating film,

wherein the third wiring is in contact with the second wiring through a second opening in the second insulating film,

wherein each end portion of the second wiring, the source electrode and the drain electrode comprises an upper end portion and a lower end portion, and

wherein a distance between the upper end portion and the lower end portion of the second wiring is longer than a distance between the upper end portion and the lower end portion of each of the source electrode and the drain electrode.

18. The semiconductor device according to claim 17, wherein at least one of a tip of the first wiring and a tip of the second wiring has a circular shape in a top view.

19. The semiconductor device according to claim 17, wherein a side surface of the second wiring has a stepwise shape.

20. The semiconductor device according to claim 17,

wherein the semiconductor film is an oxide semiconductor film comprising an In-M-Zn oxide, and

wherein M is Al, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf.

21. The semiconductor device according to claim 17,

wherein the gate electrode is a first gate electrode,

wherein the transistor further comprises a second gate electrode over the second insulating film, and

wherein the second gate electrode and the first gate electrode overlap with each other with the semiconductor film provided therebetween.

22. A display device comprising the semiconductor device according to claim 17.

23. The semiconductor device according to claim 17, wherein an angle formed by a bottom surface and a side surface of the second wiring is smaller than that of each of the source electrode and the drain electrode.

24. A semiconductor device comprising:

a wiring; and

a transistor comprising;

a first gate electrode;

a first insulating film over the first gate electrode;

a semiconductor film including a channel formation region over the first insulating film;

a source electrode and a drain electrode over and electrically connected to the semiconductor film;

a second insulating film over the wiring, the source electrode and the drain electrode; and

a second gate electrode over the second insulating film,

wherein the wiring, the source electrode and the drain electrode are provided on a same surface,

wherein each end portion of the wiring, the source electrode and the drain electrode comprises an upper end portion and a lower end portion,

wherein a distance between the upper end portion and the lower end portion of the wiring is longer than a distance between the upper end portion and the lower end portion of each of the source electrode and the drain electrode,

wherein the second gate electrode comprises a first region and a second region that face each other in a channel width direction of the transistor, and

wherein the semiconductor film is between the first region and the second region of the second gate electrode.

25. The semiconductor device according to claim 24,

wherein the semiconductor film is an oxide semiconductor film comprising an In-M-Zn oxide, and

wherein M is Al, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf.

26. The semiconductor device according to claim 24, wherein an angle formed by a bottom surface and a side surface of the wiring is smaller than that of each of the source electrode and the drain electrode.

27. A display device comprising the semiconductor device according to claim 24.

28. A semiconductor device comprising:

a wiring; and

a transistor comprising;

a first gate electrode;

a first insulating film over the first gate electrode;

a semiconductor film including a channel formation region over the first insulating film;

a source electrode and a drain electrode over and electrically connected to the semiconductor film;

a second insulating film over the wiring, the source electrode and the drain electrode; and

a second gate electrode over the second insulating film,

wherein the wiring, the source electrode and the drain electrode are provided on a same surface,

wherein each end portion of the wiring, the source electrode and the drain electrode comprises an upper end portion and a lower end portion,

wherein a distance between the upper end portion and the lower end portion of the wiring is longer than a distance between the upper end portion and the lower end portion of each of the source electrode and the drain electrode,

wherein a first opening is in the first insulating film and the second insulating film, and a second opening is in the first insulating film and the second insulating film,

wherein the semiconductor film is between the first opening and the second opening, and

wherein the first gate electrode and the second gate electrode are electrically connected to each other through the first opening and the second opening.

29. The semiconductor device according to claim 28,

wherein the semiconductor film is an oxide semiconductor film comprising an In-M-Zn oxide, and

wherein M is Al, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf.

30. The semiconductor device according to claim 28, wherein an angle formed by a bottom surface and a side surface of the wiring is smaller than that of each of the source electrode and the drain electrode.

31. A display device comprising the semiconductor device according to claim 28.