Small-grain three-dimensional memory
First Claim
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1. A small-grain three-dimensional memory, comprising:
- a substrate level comprising a semiconductor substrate, said substrate level further comprising a plurality of functional transistors, said functional transistors forming at least a processing circuit; and
at least a first memory level stacked above said semiconductor substrate and coupled to said substrate level through a plurality of inter-level vias, said first memory level comprising a plurality of memory cells, wherein each of said memory cells comprises a small-grain diode with a critical dimension no larger than 40 nm, a grain size of said small-grain diode being substantially smaller than a small-grain diode size;
wherein the critical dimension of said first memory level is smaller than the critical dimension of said substrate level.
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Abstract
The present invention discloses a small-grain three-dimensional memory (3D-MSG). Each of its memory cells comprises a thin-film diode with critical dimension no larger than 40 nm. The thin-film diode comprises at least a small-grain material, whose grain size G is substantially smaller than the diode size D. The small-grain material is preferably a nano-crystalline material or an amorphous material. The critical dimension f of the small-grain diode is smaller than the critical dimension F of the single-crystalline transistor.
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Citations
20 Claims
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1. A small-grain three-dimensional memory, comprising:
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a substrate level comprising a semiconductor substrate, said substrate level further comprising a plurality of functional transistors, said functional transistors forming at least a processing circuit; and at least a first memory level stacked above said semiconductor substrate and coupled to said substrate level through a plurality of inter-level vias, said first memory level comprising a plurality of memory cells, wherein each of said memory cells comprises a small-grain diode with a critical dimension no larger than 40 nm, a grain size of said small-grain diode being substantially smaller than a small-grain diode size; wherein the critical dimension of said first memory level is smaller than the critical dimension of said substrate level. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A small-grain three-dimensional memory, comprising:
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a substrate level comprising a semiconductor substrate, said substrate level further comprising a plurality of functional transistors, said functional transistors forming at least a memory circuit; and at least a first memory level stacked above said semiconductor substrate and coupled to said substrate level through a plurality of inter-level vias, said first memory level comprising a plurality of memory cells, wherein each of said memory cells comprises a small-grain diode with a critical dimension no larger than 40 nm, a grain size of said small-grain diode being substantially smaller than a small-grain diode size; wherein the critical dimension of said first memory level is smaller than the critical dimension of said substrate level. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification