Trench-based power semiconductor devices with increased breakdown voltage characteristics
First Claim
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1. A semiconductor device comprising:
- a gate runner disposed above a semiconductor region;
a trench disposed in the semiconductor region and having a first portion disposed on a first side of the gate runner and a second portion disposed on a second side of the gate runner;
a shield dielectric disposed in the semiconductor region and lining a sidewall of the trench;
a shield electrode disposed in the semiconductor region and having a first portion disposed in the first portion of the trench, the shield electrode having a second portion disposed in the second portion of the trench;
a gate dielectric disposed in the semiconductor region and lining an upper sidewall of the second portion of the trench;
a gate electrode disposed in the semiconductor region and disposed in the second portion of the trench and insulated from the second portion of the shield electrode; and
a shield runner made of a metal and disposed above the semiconductor region and having a portion contacting a top surface of the first portion of the shield electrode, the top surface of the first portion of the shield electrode being at or below a top surface of the semiconductor region.
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Abstract
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
228 Citations
27 Claims
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1. A semiconductor device comprising:
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a gate runner disposed above a semiconductor region; a trench disposed in the semiconductor region and having a first portion disposed on a first side of the gate runner and a second portion disposed on a second side of the gate runner; a shield dielectric disposed in the semiconductor region and lining a sidewall of the trench; a shield electrode disposed in the semiconductor region and having a first portion disposed in the first portion of the trench, the shield electrode having a second portion disposed in the second portion of the trench; a gate dielectric disposed in the semiconductor region and lining an upper sidewall of the second portion of the trench; a gate electrode disposed in the semiconductor region and disposed in the second portion of the trench and insulated from the second portion of the shield electrode; and a shield runner made of a metal and disposed above the semiconductor region and having a portion contacting a top surface of the first portion of the shield electrode, the top surface of the first portion of the shield electrode being at or below a top surface of the semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor device, comprising:
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a first trench disposed in a semiconductor region, the first trench including a shield electrode insulated from a gate electrode; a source pad disposed above the semiconductor region and electrically coupled to the shield electrode of the first trench; a gate pad disposed above the semiconductor region; a gate runner disposed above the semiconductor region and electrically coupled to the gate pad and to the gate electrode of the first trench, the first trench having a first portion disposed on a first side of the gate runner and a second portion disposed on a second side of the gate runner; a second trench disposed in the semiconductor region, the second trench including a conductive electrode disposed therein; and a shield runner made of a metal and disposed above the semiconductor region and contacting a top surface of a first portion of the conductive electrode included in the second trench, the top surface of the first portion of the conductive electrode included in the second trench being at or below a top surface of the semiconductor region. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification