Semiconductor device
First Claim
1. A semiconductor device comprising:
- a glass substrate;
a gate electrode over the glass substrate;
a gate insulating film over the gate electrode;
a first metal film and a second metal film over the gate insulating film; and
an oxide semiconductor film in contact with the first metal film and the second metal film,wherein a side surface of the first metal film faces a side surface of the second metal film, andwherein each of the side surface of the first metal film and the side surface of the second metal film has a step in a lower end portion thereof.
0 Assignments
1 Petition
Accused Products
Abstract
A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.
170 Citations
20 Claims
-
1. A semiconductor device comprising:
-
a glass substrate; a gate electrode over the glass substrate; a gate insulating film over the gate electrode; a first metal film and a second metal film over the gate insulating film; and an oxide semiconductor film in contact with the first metal film and the second metal film, wherein a side surface of the first metal film faces a side surface of the second metal film, and wherein each of the side surface of the first metal film and the side surface of the second metal film has a step in a lower end portion thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A semiconductor device comprising:
-
a glass substrate; a gate electrode over the glass substrate; a gate insulating film over the gate electrode; a first metal film and a second metal film over the gate insulating film; and an oxide semiconductor film in contact with the first metal film and the second metal film, wherein a side surface of the first metal film faces a side surface of the second metal film, wherein each of the side surface of the first metal film and the side surface of the second metal film has a step in a lower end portion thereof, wherein each of the first metal film and the second metal film comprises a first layer and a second layer, and wherein the first layer and the second layer comprises different material from each other. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification