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Semiconductor device

  • US 9,293,548 B2
  • Filed: 04/13/2015
  • Issued: 03/22/2016
  • Est. Priority Date: 09/15/2010
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device, comprising:

  • a first electrode;

    a first conductivity-type base layer provided on the first electrode;

    a second conductivity-type base layer provided on the first conductivity-type base layer;

    a semiconductor layer of the first conductivity type provided on the second conductivity-type base layer;

    a gate electrode extending through the semiconductor layer and the second conductivity-type base layer and terminating inwardly of the first conductivity-type base layer, and separated from the first conductivity-type base layer, the second conductivity-type base layer and the semiconductor layer by a gate insulating film, the gate electrode including a plurality of gate electrode portions;

    a layer of the second conductivity type selectively provided in the first conductivity-type base layer;

    a second electrode extending through the semiconductor layer and the second conductivity-type base layer and terminating inwardly of the layer, the second electrode being in contact with the layer, the second electrode including a first electrode portion and a second electrode portion provided adjacent to the first electrode portion, the plurality of gate electrode portions provided between the first electrode portion and second electrode portion; and

    a third electrode provided on the semiconductor layer and being electrically connected to the semiconductor layer and the second electrode.

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