Power light emitting diode and method with uniform current density operation
First Claim
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1. A light emitting diode comprising:
- a bulk gallium and nitrogen containing substrate having a surface region; and
an active region formed overlying the surface region;
wherein, the light emitting diode is configured to emit light from the active region having an emission intensity varying no more than +/−
20% across the active region, at a current density between 175 Amps/cm2 and 2,000 Amps/cm2.
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Abstract
A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
402 Citations
30 Claims
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1. A light emitting diode comprising:
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a bulk gallium and nitrogen containing substrate having a surface region; and an active region formed overlying the surface region; wherein, the light emitting diode is configured to emit light from the active region having an emission intensity varying no more than +/−
20% across the active region, at a current density between 175 Amps/cm2 and 2,000 Amps/cm2. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A light emitting diode comprising:
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a bulk gallium and nitrogen containing substrate having a surface region bounded by a polygonal area formed of at least a longest lateral side and a shortest lateral side; and an active region formed by epitaxial growth upon the surface region; the light-emitting diode having a thickness wherein the aspect ratio of the thickness to the longest lateral side is from about 0.05 to about 10, and being configured to emit light from the active region having an emission intensity varying no more than +/−
20% across the active regionat a current density of greater than about 175 Amps/cm2. - View Dependent Claims (26, 27, 28, 29, 30)
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Specification