Light source with light scattering features, device including light source with light scattering features, and/or methods of making the same

• US 9,293,653 B2
• Filed: 10/08/2010
• Issued: 03/22/2016
• Est. Priority Date: 10/08/2010
• Status: Active Grant

• Current Assignee: Guardian Glass LLC (KOCH Industries Incorporated)
• Original Assignee: Guardian Industries Corporation (KOCH Industries Incorporated)
• Inventors: Veerasamy, Vijayen S., Alvarez, Jemssy
• Primary Examiner(s): WHALEN, DANIEL B
• Application Number:
  US12/923,834
• Publication Number:
  US 20120086022A1
• Time in Patent Office: 1,992 Days
• Field of Search: 438/32, 257/E33.069
• US Class Current: 1/1
• CPC Class Codes: H01L 24/14 of a plurality of bump connectors
• CPC Class Codes: H01L 24/17 of a plurality of bump connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12043 Photo diode
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

Certain example embodiments of this invention relate to techniques for improving the performance of Lambertian and non-Lambertian light sources. In certain example embodiments, this is accomplished by (1) providing an organic-inorganic hybrid material on LEDs (which in certain example embodiments may be a high index of refraction material), (2) enhancing the light scattering ability of the LEDs (e.g., by fractal embossing, patterning, or the like, and/or by providing randomly dispersed elements thereon), and/or (3) improving performance through advanced cooling techniques. In certain example instances, performance enhancements may include, for example, better color production (e.g., in terms of a high CRI), better light production (e.g., in terms of lumens and non-Lambertian lighting), higher internal and/or external efficiency, etc.

Claims

1. A method of making an LED device, the method comprising:

providing a substrate;

forming a plurality of LEDs on the substrate; and

creating a random pattern on the LEDs and/or in one or more layers of the LEDs, the random pattern having a light scattering effect on light produced by the LEDs, wherein the random pattern is a random fractal pattern or a fractal pattern having randomness introduced thereto.

2. The method of claim 1, wherein the creating of the random pattern comprises:

generating the fractal pattern; and

transferring the generated fractal pattern onto one or more layers of the LEDs.

3. The method of claim 2, wherein said transferring comprises embossing.

4. The method of claim 2, wherein the fractal pattern is generated in a template, the template being transferred onto one or more layers of the LEDs during the transferring.

5. The method of claim 4, further comprising etching the fractal pattern in one or more layers of the LEDs once the template is transferred thereto.

6. The method of claim 5, wherein the template is removed following the etching.

7. The method of claim 2, further comprising:

generating a fractal pattern, the fractal pattern being a random fractal pattern or having randomness introduced thereto; and

photolithographically patterning one or more layers of the LEDs using the generated fractal pattern.

8. The method of claim 1,

wherein the fractal pattern is formed in an n-layer of one or more of the LEDs.

9. The method of claim 1, wherein the creating of the random pattern comprises:

providing an aqueous solution of nano- or micron-scale elements; and

disposing the solution to an area, directly or indirectly, on the LEDs to randomly disperse the elements on the LEDs.

10. The method of claim 9, further comprising drying the solution.

11. The method of claim 9, further comprising etching or patterning the LED using the dispersed elements as a mask.

12. The method of claim 9, wherein the elements are polystyrene spheres.

13. The method of claim 12, further comprising etching the LED using the dispersed polystyrene spheres as an etch mask for a Cl-assisted Xe+ ion beam etching.

14. The method of claim 9, wherein the size and amount of elements in the aqueous solution is selected so as to result in 10-30% porosity once disposed over the LEDs.

15. The method of claim 1, wherein the creating of the random pattern on the LEDs involves etching away 10-300 nm of an outermost surface.

16. The method of claim 1, wherein the creating of the random pattern on the LEDs involves etching away 10-300 nm of a semiconductor layer thereof.