Method for manufacturing an electro-optical device

• US 9,293,726 B2
• Filed: 11/12/2014
• Issued: 03/22/2016
• Est. Priority Date: 06/04/1999
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koyama, Jun, Yamamoto, Kunitaka, Konuma, Toshimitsu
• Primary Examiner(s): Wilczewski, Mary
• Assistant Examiner(s): CHIU, TSZ K
• Application Number:
  US14/539,117
• Publication Number:
  US 20150069371A1
• Time in Patent Office: 496 Days
• Field of Search: 257/79, 257/49, 257/59, 257/88, 257/E21.413, 257/E27.111, 257/E29.278, 257/E29.282, 257/761, 438/148, 438/30, 438/34
• US Class Current: 1/1
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/87 Arrangements for heating or cooling
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 59/871 Self-supporting sealing arrangements
• CPC Class Codes: H10K 59/873 Encapsulations
• CPC Class Codes: H10K 59/8794 Arrangements for heating and cooling
• CPC Class Codes: H10K 71/135 using ink-jet printing
• CPC Class Codes: H10K 85/114 Poly-phenylenevinylene; Derivatives thereof
• CPC Class Codes: H10K 85/146 poly N-vinylcarbazol; Derivatives thereof
• CPC Class Codes: H10K 85/30 Coordination compounds
• CPC Class Codes: H10K 85/311 Phthalocyanine
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3
• CPC Class Codes: H10K 85/342 comprising iridium
• CPC Class Codes: H10K 85/346 : comprising platinum
• CPC Class Codes: H10K 85/631 : Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
• CPC Class Codes: H10K 85/649 : Aromatic compounds comprising a hetero atom

Abstract

An object of the present invention is to provide an EL display device having high operation performance and reliability.

A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali metals from the EL element 203 formed by inkjet method into TFTs is prevented. Further, the third passivation film 45 prevents penetration of moisture and oxygen from the TFTs, and suppress degradation of the EL element 203 by dispersing the heat generated by the EL element 203.

Claims

1. A light emitting device comprising:

a wiring layer and a transistor over a substrate;

a first insulating layer over the wiring line and the transistor, the first insulating layer comprising an organic material and having an opening overlapping the wiring layer;

a first electrode layer over the first insulating layer, the first electrode layer electrically connected to one of source and drain electrode layers of the transistor;

a second insulating layer covering an edge of the first electrode layer, the second insulating layer comprising an organic material;

a light emitting layer over and in contact with the first electrode layer;

a second electrode layer over the light emitting layer and a top surface of the second insulating layer; and

a third insulating layer over the second electrode layer, the third insulating layer comprising silicon, nitrogen and oxygen,

wherein an edge of the light emitting layer is located inside an edge of the second insulating layer,

wherein an edge of the second electrode is located inside an edge of the third insulating layer,

wherein the wiring layer and the source and drain electrode layers are provided on the same surface, and

wherein the wiring line extends towards an edge of the substrate to provide a portion to be electrically connected to a flexible printed circuit.

2. The light emitting device according to claim 1, wherein the second electrode layer is electrically connected to the wiring layer through the opening of the first insulating layer.

3. The light emitting device according to claim 1, wherein the third insulating layer extends beyond an edge of the first insulating film and is in contact with the wiring layer.

4. The light emitting device according to claim 1, wherein the second electrode layer is in direct contact with the wiring layer.

5. The light emitting device according to claim 1, wherein the edge of the second insulating layer is located inside the edge of the second electrode layer.

6. The light emitting device according to claim 1, further comprising an inorganic insulating layer between the first insulating layer and the first electrode layer.

7. The light emitting layer according to claim 1, further comprising a third electrode layer between the light emitting layer and the second electrode layer.

8. The light emitting device according to claim 1,

wherein the transistor and the light emitting layer are sealed in a space surrounded by the substrate, a housing member, and an adhesive, and

wherein a drying agent is provided in the space.

9. The light emitting device according to claim 1, wherein the light emitting layer comprises an organic light emitting material.

10. An electronic device comprising a display portion comprising the light emitting device according to claim 1.

11. A light emitting device comprising:

a wiring layer and a transistor over a substrate, the transistor comprising a channel formation region in a polycrystalline silicon film and a gate electrode layer over the channel formation region with a gate insulating layer provided therebetween;

a first insulating layer over the wiring line and the transistor, the first insulating layer comprising an organic material and having an opening overlapping the wiring layer;

a first electrode layer over the first insulating layer, the first electrode layer electrically connected to one of source and drain electrode layers of the transistor;

a second insulating layer covering an edge of the first electrode layer, the second insulating layer comprising an organic material;

a light emitting layer over and in contact with the first electrode layer;

a second electrode layer over the light emitting layer and a top surface of the second insulating layer; and

a third insulating layer over the second electrode layer, the third insulating layer comprising silicon, nitrogen and oxygen,

wherein an edge of the light emitting layer is located inside an edge of the second insulating layer,

wherein an edge of the second electrode is located inside an edge of the third insulating layer,

wherein the wiring layer and the source and drain electrode layers are provided on the same surface, and

wherein the wiring line extends towards an edge of the substrate to provide a portion to be electrically connected to a flexible printed circuit.

12. The light emitting device according to claim 11, wherein the second electrode layer is electrically connected to the wiring layer through the opening of the first insulating layer.

13. The light emitting device according to claim 11, wherein the third insulating layer extends beyond an edge of the first insulating film and is in contact with the wiring layer.

14. The light emitting device according to claim 11 , wherein the second electrode layer is in direct contact with the wiring layer.

15. The light emitting device according to claim 11 , wherein the edge of the second insulating layer is located inside the edge of the second electrode layer.

16. The light emitting device according to claim 11, further comprising an inorganic insulating layer between the first insulating layer and the first electrode layer.

17. The light emitting layer according to claim 11, further comprising a third electrode layer between the light emitting layer and the second electrode layer.

18. The light emitting device according to claim 11,

wherein the transistor and the light emitting layer are sealed in a space surrounded by the substrate, a housing member, and an adhesive, and

wherein a drying agent is provided in the space.

19. The light emitting device according to claim 11 , wherein the light emitting layer comprises an organic light emitting material.

20. An electronic device comprising a display portion comprising the light emitting device according to claim 11.