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Method for manufacturing an electro-optical device

  • US 9,293,726 B2
  • Filed: 11/12/2014
  • Issued: 03/22/2016
  • Est. Priority Date: 06/04/1999
  • Status: Expired due to Fees
First Claim
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1. A light emitting device comprising:

  • a wiring layer and a transistor over a substrate;

    a first insulating layer over the wiring line and the transistor, the first insulating layer comprising an organic material and having an opening overlapping the wiring layer;

    a first electrode layer over the first insulating layer, the first electrode layer electrically connected to one of source and drain electrode layers of the transistor;

    a second insulating layer covering an edge of the first electrode layer, the second insulating layer comprising an organic material;

    a light emitting layer over and in contact with the first electrode layer;

    a second electrode layer over the light emitting layer and a top surface of the second insulating layer; and

    a third insulating layer over the second electrode layer, the third insulating layer comprising silicon, nitrogen and oxygen,wherein an edge of the light emitting layer is located inside an edge of the second insulating layer,wherein an edge of the second electrode is located inside an edge of the third insulating layer,wherein the wiring layer and the source and drain electrode layers are provided on the same surface, andwherein the wiring line extends towards an edge of the substrate to provide a portion to be electrically connected to a flexible printed circuit.

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