Photonic sensor and a method of manufacturing such a sensor

• US 9,297,700 B2
• Filed: 12/03/2012
• Issued: 03/29/2016
• Est. Priority Date: 12/03/2012
• Status: Active Grant

• Current Assignee: Analog Devices, Inc.
• Original Assignee: Analog Devices, Inc.
• Inventors: Lambkin, Paul Martin, Lane, William Allan
• Primary Examiner(s): Makiya, David J
• Assistant Examiner(s): Jo, Taeho
• Application Number:
  US13/692,748
• Publication Number:
  US 20140151557A1
• Time in Patent Office: 1,212 Days
• Field of Search: 250/338.1
• US Class Current: 1/1
• CPC Class Codes: G01J 5/0225 Shape of the cavity itself or of elements contained in or suspended over the cavity
• CPC Class Codes: G01J 5/04 Casings
• CPC Class Codes: G01J 5/0831 Masks; Aperture plates; Spatial light modulators
• CPC Class Codes: G01J 5/0853 having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
• CPC Class Codes: G01J 5/12 using thermoelectric elements, e.g. thermocouples
• CPC Class Codes: G01K 7/02 using thermoelectric elements, e.g. thermocouples
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A photonic sensor, comprising: a platform, a temperature sensor on the platform; and a structure formed on or as part of the platform.

Claims

1. A photonic sensor, comprising:

a platform supported over a substrate by at least one leg, wherein there is a gap between the platform and the substrate;

a structure of the platform comprising dielectric material having a structure with reduced mass relative to a corresponding planar layer of dielectric material, the dielectric material comprising at least one of silicon oxide or silicon nitride;

a metal layer of the platform configured to reflect radiation back to the dielectric material, wherein the gap is between the metal layer and the substrate, and wherein the metal layer is perforated; and

a temperature sensor on the platform, wherein the temperature sensor is configured to sense a change in temperature due to absorption of radiation by the dielectric material of the platform.

2. A sensor as claimed in claim 1, in which the structure is etched into the platform.

3. A sensor as claimed in claim 1, in which the structure comprises a plurality of voids.

4. A sensor as claimed in claim 3, in which the voids form a plurality of intersecting trenches.

5. A sensor as claimed in claim 3, in which the voids are not of uniform depth within the platform.

6. A sensor as claimed in claim 1, in which the platform further comprises a semiconductor layer in association with the metal layer.

7. A sensor as claimed in claim 1, wherein the dielectric material of the platform comprises a layer of silicon nitride.

8. A sensor as claimed in claim 1, wherein the dielectric material of the platform comprises a plurality of column or hill like structures extending from a first side of the metal layer.

9. A sensor as claimed in claim 8, in which the plurality of column or hill like structures are formed in an intra-structure scale of less than lambda, where lambda is the maximum wavelength to be detected, and is 50×

10<sup>−

6</sup> m or less.

10. A sensor as claimed in claim 1, comprising a plurality of platforms arranged in an array within an evacuated cavity bounded on a first side by a window.

11. A sensor as claimed in claim 1, in which the platform is supported by two or more slender legs, each of the slender legs having a length that is at least three times a corresponding width, said slender legs having a combined width at an interface with the platform of less than one quarter of the periphery of the platform.

12. A sensor as claimed in claim 1, in which the temperature sensor is a thermocouple junction.

13. A temperature sensor as claimed in claim 12, in which the thermocouple junction comprises one of:

a) a polysilicon to polysilicon junction, where a doping concentration varies across the junction;

or

b) a SiGe to SiGe junction.

14. A sensor as claimed in claim 1, further comprising a conductor on or adjacent the platform configured to provide ohmic heating to the platform.

15. A sensor as claimed in claim 1, in which the temperature sensor is a temperature dependent resistor.

16. A sensor as claimed in claim 1, wherein the dielectric material comprises the silicon oxide.

17. A sensor as claimed in claim 1, wherein the leg comprises a slender element having a length and a width, the length being at least three times the width.

18. A sensor as claimed in claim 1, wherein the at least one leg is configured to support the platform above a substrate in a substantially fixed position.

19. A sensor as claimed in claim 1, wherein the structures comprises at least one of columns of the dielectric material or dielectric material having holes therethrough.

20. A method of forming a photonic sensor, comprising:

processing a portion of a semiconductor substrate so as to form a platform supported over a substrate and held to a supporting structure by at least one leg, the platform comprising dielectric material and a metal layer, the dielectric material comprising at least one of silicon oxide or silicon nitride, the metal layer forming a lower surface of the platform, the metal layer being configured to reflect radiation back to the dielectric material, wherein the metal layer is perforated, and wherein there is a gap between the lower surface of the platform and the substrate;

forming a sub-wavelength structure on an upper surface of the platform, said structure comprising either a plurality of isolated or interconnected upstanding regions of the dielectric material; and

forming a temperature sensor on the platform, wherein the temperature sensor is configured to sense a change in temperature due to absorption of radiation by the dielectric material.

21. A method as claimed in claim 20, in which the processing comprises masking and etching the substrate to form the platform.

22. A method as claimed in claim 21, in which the platform is released from contact with the substrate to form the gap by etching material between the platform and the substrate, wherein the perforations in the metal layer allow etchant to flow through the platform.

23. A method as claimed in claim 20, in which the at least one leg has a length and a width, the length being at least three times the width.

24. A photonic sensor, comprising:

a platform supported by at least one leg;

a structure of the platform comprising dielectric material and a plurality of voids, the dielectric material comprising at least one of silicon oxide or silicon nitride;

a metal layer of the platform configured to reflect radiation back to the dielectric material, wherein the metal layer is perforated; and

a temperature sensor on the platform, wherein the temperature sensor is configured to sense a change in temperature due to absorption of radiation by the dielectric material of the platform;

wherein the sensor is configured to detect impinging optical radiation, and wherein the voids each have a width approximately equal to a wavelength of the impinging optical radiation.

25. A sensor as claimed in claim 24, wherein the optical radiation has a wavelength in the range from about 8 μ

m to 15 μ

m.