Discrete three-dimensional vertical memory comprising off-die voltage generator
First Claim
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1. A discrete three-dimensional vertical memory (3D-MV), comprising:
- a 3D-array die comprising at least a 3D-MV array, wherein said 3D-MV array comprises a plurality of vertical memory strings, each of said vertical memory strings comprising a plurality of vertically stacked memory cells;
a voltage-generator die comprising at least a portion of a voltage generator for providing said 3D-array die with at least a read voltage and/or a write voltage other than the voltage supply;
wherein said portion of said voltage generator is absent from said 3D-array die;
the number of memory cells on each of said vertical memory strings in said 3D-array die is substantially more than the number of interconnect levels in said voltage-generator die; and
, said 3D-array die and said voltage-generator die are separate dice.
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Abstract
The present invention discloses a discrete three-dimensional vertical memory (3D-MV). It comprises at least a 3D-array die and at least a voltage-generator die. The 3D-array die comprises a plurality of vertical memory strings. At least a voltage generator for the 3D-array die is located on the voltage-generator die instead of the 3D-array die. The 3D-array die and the voltage-generator die have substantially different back-end-of-line (BEOL) structures.
67 Citations
20 Claims
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1. A discrete three-dimensional vertical memory (3D-MV), comprising:
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a 3D-array die comprising at least a 3D-MV array, wherein said 3D-MV array comprises a plurality of vertical memory strings, each of said vertical memory strings comprising a plurality of vertically stacked memory cells; a voltage-generator die comprising at least a portion of a voltage generator for providing said 3D-array die with at least a read voltage and/or a write voltage other than the voltage supply; wherein said portion of said voltage generator is absent from said 3D-array die;
the number of memory cells on each of said vertical memory strings in said 3D-array die is substantially more than the number of interconnect levels in said voltage-generator die; and
, said 3D-array die and said voltage-generator die are separate dice. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A discrete three-dimensional vertical memory (3D-MV), comprising:
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a 3D-array die comprising at least a 3D-MV array and a peripheral circuit located outside said 3D-MV array, wherein said 3D-MV array comprises a plurality of vertical memory strings, each of said vertical memory strings comprising a plurality of vertically stacked memory cells; a voltage-generator die comprising at least a portion of a voltage generator for providing said 3D-array die with at least a read voltage and/or a write voltage other than the voltage supply; wherein said portion of said voltage generator is absent from said 3D-array die;
said peripheral circuit and said voltage-generator die comprise different interconnect materials; and
, said 3D-array die and said voltage-generator die are separate dice. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification